Soitec and Intelligent Epitaxy Technology, Inc., a provider of indium phosphide (InP), gallium arsenide (GaAs), and gallium antimonide (GaSb) epitaxial wafers, have signed a collaborative agreement to better serve the GaAs market.
This partnership aims at addressing the market requirements for a reliable second source. The agreement includes a technology license granted by Soitec to IntelliEPI, which may be extended to address future business opportunities in the GaAs market, including equipment transfer.
“We are delighted to announce the license of our technology leading to a second source for our products for our key GaAs customers,” said Bernard Aspar, Senior Vice President and Soitec’s Communication & Power Business Unit General Manager.
“This collaborative agreement will reinforce our GaAs technology and product know-how while, at the same time, offering Soitec’s customers supply-chain security,” said Yung-Chung Kao, IntelliEPI President and CEO.
Gallium arsenide (GaAs) is a compound of the elements gallium and arsenic. It is a III-V semiconductor, and is used in the manufacture of devices such as microwave frequency integrated circuits, monolithic microwave integrated circuits, infrared light-emitting diodes, laser diodes, solar cells and optical windows. GaAs is often used as a substrate material for the epitaxial growth of other III-V semiconductors including InGaAs and GaInNAs.