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<title><![CDATA[RSS for Hafnium Oxide]]></title>
<description><![CDATA[Hafnium Oxide news and technical articles from Solid State Technology Magazine. Search Hafnium Oxide latest and archived news and articles]]></description>
<link><![CDATA[http://www.electroiq.com/topics/]]></link>
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<title><![CDATA[IRPS 2013: Oxygen interstitials can impact RRAM retention time]]></title>
<link><![CDATA[http://www.electroiq.com/articles/sst/2013/04/irps-2013--oxygen-interstitials-can-impact-rram-retention-time-.html]]></link>
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<pubDate><![CDATA[Tue, 16 Apr 2013 13:56:00 EDT]]></pubDate>
<description><![CDATA[The ability of a resistive RAM device to maintain its resistance state, otherwise known as retention time , can be impacted by the electrode materials used.]]></description>
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<title><![CDATA[Today's top reliability challenges]]></title>
<link><![CDATA[http://www.electroiq.com/articles/sst/print/volume-56/issue-2/features/reliability/today-s-top-reliability-challenges.html]]></link>
<guid>http://www.electroiq.com/articles/sst/print/volume-56/issue-2/features/reliability/today-s-top-reliability-challenges.html</guid>
<pubDate><![CDATA[Fri, 01 Mar 2013 01:00:00 EST]]></pubDate>
<description><![CDATA[BTS, BTI, soft errors, dielectric breakdown and other reliability challenges will be addressed at the upcoming International Reliability Physics Symposium. PETE SINGER, Editor-in-Chief.]]></description>
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<title><![CDATA[Advancing CNTs for next-gen chips]]></title>
<link><![CDATA[http://www.electroiq.com/articles/sst/2012/11/advancing-cnts-for-next-gen-chips.html]]></link>
<guid>http://www.electroiq.com/articles/sst/2012/11/advancing-cnts-for-next-gen-chips.html</guid>
<pubDate><![CDATA[Thu, 08 Nov 2012 07:00:00 EST]]></pubDate>
<description><![CDATA[Researchers from IBM and Georgia Tech have disclosed significant progress in manipulating carbon nanotubes in transistors and interconnects, in ways compatible with traditional fabrication techniques, advancing toward using the materials for next-generation devices.]]></description>
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<title><![CDATA[AVS Symposium 2011: A pre-show highlight reel]]></title>
<link><![CDATA[http://www.electroiq.com/articles/sst/2011/10/avs-symposium-2011-a-preshow-highlight-reel.html]]></link>
<guid>http://www.electroiq.com/articles/sst/2011/10/avs-symposium-2011-a-preshow-highlight-reel.html</guid>
<pubDate><![CDATA[Tue, 11 Oct 2011 11:59:00 EDT]]></pubDate>
<description><![CDATA[Heading to the AVS Symposium later this month (Oct. 30-Nov. 4) in Nashville, TN? We've scanned the program to pick out some of the sessions that are of interest.]]></description>
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<title><![CDATA[ASM covers FinFET precursor needs from epitaxy to HKMG ALD]]></title>
<link><![CDATA[http://www.electroiq.com/articles/sst/2011/july/asm-covers-finfet-precursor-needs-from-epitaxy-to-hkmg-ald.html]]></link>
<guid>http://www.electroiq.com/articles/sst/2011/july/asm-covers-finfet-precursor-needs-from-epitaxy-to-hkmg-ald.html</guid>
<pubDate><![CDATA[Fri, 22 Jul 2011 09:52:00 EDT]]></pubDate>
<description><![CDATA[ASM International's Bob Hollands discusses the challenges of making FinFET structures using both epitaxial and high-k/metal gate (HKMG) atomic layer deposition (ALD) processes.]]></description>
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<title><![CDATA[AVS-ALD, Day 2: Manufacturability takes center stage]]></title>
<link><![CDATA[http://www.electroiq.com/articles/sst/2011/06/avs-ald-day-2-manufacturability-takes-center-stage.html]]></link>
<guid>http://www.electroiq.com/articles/sst/2011/06/avs-ald-day-2-manufacturability-takes-center-stage.html</guid>
<pubDate><![CDATA[Wed, 29 Jun 2011 11:45:00 EDT]]></pubDate>
<description><![CDATA[At this week's AVS/ALD Conference, Intermolecular's Chi-I Lang reports on Day 2 highlights: faster and more flexible approaches to ALD processing, integration challenges with platinum ALD, a peek behind the curtain of equipment development, and the unique challenge of vendor support for high-volume ...]]></description>
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<title><![CDATA[ASMC 2011: EUV, image sensors, and a capital perspective]]></title>
<link><![CDATA[http://www.electroiq.com/articles/sst/2011/05/asmc-2011-euv-image.html]]></link>
<guid>http://www.electroiq.com/articles/sst/2011/05/asmc-2011-euv-image.html</guid>
<pubDate><![CDATA[Thu, 19 May 2011 14:20:10 EDT]]></pubDate>
<description><![CDATA[The last day of this week's SEMI/IEEE Advanced Semiconductor Manufacturing Conference (ASMC) featured talks on EUV readiness and hurdles, CMOS image sensors' increasing complexity, embedded memory failure analysis to improve yields, and a coming shift from chip technology efficiency back to ...]]></description>
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<title><![CDATA[High-k semiconductor materials from a chemical manufacturer perspective]]></title>
<link><![CDATA[http://www.electroiq.com/articles/sst/2011/02/high-k-semiconductor-materials-from-a-chemical-manufacturer-pers.html]]></link>
<guid>http://www.electroiq.com/articles/sst/2011/02/high-k-semiconductor-materials-from-a-chemical-manufacturer-pers.html</guid>
<pubDate><![CDATA[Mon, 28 Feb 2011 09:15:00 EST]]></pubDate>
<description><![CDATA[Geoff Irvine, SAFC Hitech, reviews the development and introduction of high- k layers into the semiconductor industry, and what the next 20 years might bring in the next-generation high- k and ultra-high- k layers and precursors.]]></description>
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<title><![CDATA[Materials modification with HfO for next-gen semiconductor devices]]></title>
<link><![CDATA[http://www.electroiq.com/articles/sst/2011/01/materials-modification-with-hfo-for-next-gen-semiconductor-devic.html]]></link>
<guid>http://www.electroiq.com/articles/sst/2011/01/materials-modification-with-hfo-for-next-gen-semiconductor-devic.html</guid>
<pubDate><![CDATA[Mon, 10 Jan 2011 14:35:00 EST]]></pubDate>
<description><![CDATA[For the near-term, i.e., extending scaling for one or possibly two more generations below 22nm, Glen Wilk, ASM America, is keen on using materials modification to do the job. He views it as a simple near-term solution from a manufacturing standpoint, given the semiconductor industry's experience ...]]></description>
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<title><![CDATA[Atomic layer deposition goes mainstream in 22nm logic technologies]]></title>
<link><![CDATA[http://www.electroiq.com/articles/sst/print/volume-53/issue-10/features/atomic-layer-depostion/atomic-layer-deposition-goes-mainstream.html]]></link>
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<pubDate><![CDATA[Mon, 01 Nov 2010 01:00:00 EDT]]></pubDate>
<description><![CDATA[Cost-of-ownership (COO) will be a main driver for ALD equipment selection in cost-sensitive markets; and in foundry or other logic applications, equipment choice is more a mix between COO, turn-around time and process performance considerations. M. Verghese, ASM, Phoenix, AZ USA; J. W. Maes, ASM, ...]]></description>
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