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<title><![CDATA[RSS for Layer Growth]]></title>
<description><![CDATA[Layer Growth news and technical articles from Solid State Technology Magazine. Search Layer Growth latest and archived news and articles]]></description>
<link><![CDATA[http://www.electroiq.com/topics/]]></link>
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<title><![CDATA[First LEDs fabricated on amorphous glass substrates]]></title>
<link><![CDATA[http://www.electroiq.com/articles/sst/2011/12/first-leds-fabricated-on-amorphous-glass-substrates.html]]></link>
<guid>http://www.electroiq.com/articles/sst/2011/12/first-leds-fabricated-on-amorphous-glass-substrates.html</guid>
<pubDate><![CDATA[Wed, 07 Dec 2011 14:37:00 EST]]></pubDate>
<description><![CDATA[Researchers at the Samsung Advanced Institute of Technology and Seoul National University have demonstrated the first LEDs to be fabricated on amorphous glass substrates.]]></description>
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<title><![CDATA[Veeco GaN MOCVD tool debut]]></title>
<link><![CDATA[http://www.electroiq.com/articles/sst/2011/02/veeco-gan-mocvd-tool-debut-captures-led-tv-momentum.html]]></link>
<guid>http://www.electroiq.com/articles/sst/2011/02/veeco-gan-mocvd-tool-debut-captures-led-tv-momentum.html</guid>
<pubDate><![CDATA[Thu, 17 Feb 2011 14:15:00 EST]]></pubDate>
<description><![CDATA[Veeco Instruments' new TurboDisc MaxBright GaN MOCVD multi-reactor system is poised to take advantage of what the company believes is an accelerated rate of LED TV penetration. The new system targets manufacturing of HB-LEDs and is capable of single- or multi-chamber layer growth.]]></description>
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<title><![CDATA[Report from VLSI Symposium: Planar CMOS to 22nm, at most]]></title>
<link><![CDATA[http://www.electroiq.com/articles/sst/print/volume-51/issue-8/departments/tech-news/report-from-vlsi-symposium-planar-cmos-to-22nm-at-most.html]]></link>
<guid>http://www.electroiq.com/articles/sst/print/volume-51/issue-8/departments/tech-news/report-from-vlsi-symposium-planar-cmos-to-22nm-at-most.html</guid>
<pubDate><![CDATA[Fri, 01 Aug 2008 01:08:00 EDT]]></pubDate>
<description><![CDATA[This year’s VLSI Symposium meeting (June 16-19, Waikiki, HI) highlighted 45nm to 16nm CMOS technology.]]></description>
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<title><![CDATA[Report from the VLSI Symposium: Planar CMOS to 22nm, but no more]]></title>
<link><![CDATA[http://www.electroiq.com/articles/sst/2008/07/report-from-the-vlsi-symposium-planar-cmos-to-22nm-but-no-more.html]]></link>
<guid>http://www.electroiq.com/articles/sst/2008/07/report-from-the-vlsi-symposium-planar-cmos-to-22nm-but-no-more.html</guid>
<pubDate><![CDATA[Tue, 01 Jul 2008 09:07:00 EDT]]></pubDate>
<description><![CDATA[Overall agreement at this year's VLSI Symposium (June 16-19, Waikiki, Hawaii) was that planar CMOS is extendable to 22nm node but unlikely beyond that. By the 16nm node SRAMs will need FinFETs or a trigate-like design, which can be fabricated in bulk wafers rather than SOI wafers, as first reported ...]]></description>
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<title><![CDATA[CVD processing platform]]></title>
<link><![CDATA[http://www.electroiq.com/articles/sst/print/volume-50/issue-1/departments/product-news/cvd-processing-platform.html]]></link>
<guid>http://www.electroiq.com/articles/sst/print/volume-50/issue-1/departments/product-news/cvd-processing-platform.html</guid>
<pubDate><![CDATA[Mon, 01 Jan 2007 01:01:00 EST]]></pubDate>
<description><![CDATA[The Producer GT offers 150 wafers/hour throughput, thanks to a FX robot allowing simultaneous transfer of four wafers and a three-“Twin Chamber” configuration.]]></description>
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<title><![CDATA[Eco-Snow Systems introduces new, dry semiconductor wafer cleaning process]]></title>
<link><![CDATA[http://www.electroiq.com/articles/cr/2005/07/eco-snow-systems-introduces-new-dry-semiconductor-wafer-cleaning-process.html]]></link>
<guid>http://www.electroiq.com/articles/cr/2005/07/eco-snow-systems-introduces-new-dry-semiconductor-wafer-cleaning-process.html</guid>
<pubDate><![CDATA[Tue, 12 Jul 2005 07:07:00 EDT]]></pubDate>
<description><![CDATA[SAN FRANCISCO, CA (July 11, 2005)-Eco-Snow Systems, a member of The BOC Group (NYSE: BOX), and the leading supplier of dry carbon dioxide (CO2) snow-based wafer cleaning tools, has introduced a new process for semiconductor wafer cleaning that eliminates the negative side effects of traditional ...]]></description>
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<title><![CDATA[ASM International and Veeco sign ALD licensing agreement]]></title>
<link><![CDATA[http://www.electroiq.com/articles/sst/2005/06/asm-international-and-veeco-sign-ald-licensing-agreement.html]]></link>
<guid>http://www.electroiq.com/articles/sst/2005/06/asm-international-and-veeco-sign-ald-licensing-agreement.html</guid>
<pubDate><![CDATA[Thu, 23 Jun 2005 09:06:00 EDT]]></pubDate>
<description><![CDATA[June 23, 2005 - ASM International N.V. has signed an agreement granting Veeco Instruments Inc. a license to ASM's patent portfolio relating to atomic layer deposition (ALD) technology, according to a recent release. The license includes 252 issued and published patents. Terms of the licensing ...]]></description>
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<title><![CDATA[Crucial applications addressed via fundamental ALD advances]]></title>
<link><![CDATA[http://www.electroiq.com/articles/sst/print/volume-48/issue-2/features/deposition/crucial-applications-addressed-via-fundamental-ald-advances.html]]></link>
<guid>http://www.electroiq.com/articles/sst/print/volume-48/issue-2/features/deposition/crucial-applications-addressed-via-fundamental-ald-advances.html</guid>
<pubDate><![CDATA[Tue, 01 Feb 2005 01:02:00 EST]]></pubDate>
<description><![CDATA[The need for ultrathin high- k dielectric DRAM capacitors used in memory applications below 100nm, and for ultrathin high- k gate-dielectric materials in transistors at the 65nm node and below, presents challenges for improving ALD productivity.]]></description>
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<title><![CDATA[Strategies for high-productivity ALD]]></title>
<link><![CDATA[http://www.electroiq.com/articles/sst/print/volume-46/issue-11/departments/feol/strategies-for-high-productivity-ald.html]]></link>
<guid>http://www.electroiq.com/articles/sst/print/volume-46/issue-11/departments/feol/strategies-for-high-productivity-ald.html</guid>
<pubDate><![CDATA[Sat, 01 Nov 2003 01:11:00 EST]]></pubDate>
<description><![CDATA[The unique properties of atomic-layer deposition (ALD) films have captured considerable interest from IC manufacturers facing challenging manufacturing needs.]]></description>
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<title><![CDATA[The detrimental effect of moisture in SiGe epitaxy]]></title>
<link><![CDATA[http://www.electroiq.com/articles/sst/print/volume-45/issue-3/features/contamination-control/the-detrimental-effect-of-moisture-in-sige-epitaxy.html]]></link>
<guid>http://www.electroiq.com/articles/sst/print/volume-45/issue-3/features/contamination-control/the-detrimental-effect-of-moisture-in-sige-epitaxy.html</guid>
<pubDate><![CDATA[Fri, 01 Mar 2002 01:03:00 EST]]></pubDate>
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