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methods, like roll-to-roll (R2R) nanoimprint lithography. This high-resolution patterning technique produces transistor channel lengths below 1µm, increasing organic electronics’ performance. Researchers plan to demonstrate an active
width, height, profile) or excessive surface state density caused by plasma etch-induced damage would alter the transistor channel . FIGURE 1. The fin/STI etch requires creating both tapered isolation trenches and vertical fins, which will