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  1. TI plans 0.1-um for 2001

    Magazine Articles

    Thu, 1 Oct 1998

    CMOS process into volume production on 300-mm wafers by 2001. The production technology would enable effective transistor channel lengths of 0.07 ?m, and 1.2 V operation; up to 8 layers of all-copper interconnect are envisioned, as

  2. Ge-channel engineering fuels drive to 45nm and 32nm nodes

    Magazine Articles

    Mon, 16 May 2005

    Debra Vogler, Senior Editor The use of germanium in the transistor channel for advanced CMOS devices is not a new idea, but a plethora of papers addressing this performance enhancer were presented at the

  1. SEMICON West 2012 exhibits preview: Wafer processing and handling

    Online Articles

    Mon, 18 Jun 2012

    low energy. The system's Energy Purity Module virtually eliminates high-energy species that can "smear" the transistor channel . Integrated cryogenic technology enables production implants as low as -100°C. Applied Materials Inc., South

  2. AMAT debuts ion implant tool for high-yield 20nm semiconductor fab

    Online Articles

    Wed, 6 Jun 2012

    low energy. The system's Energy Purity Module virtually eliminates high-energy species that can "smear" the transistor channel . Integrated cryogenic technology enables production implants as low as -100°C, which Applied points to as vital

  3. Applied unveils new PVD, PECVD tools for display manufacturing

    Online Articles

    Wed, 31 Oct 2012

    proprietary rotary cathode design employs unique deposition modulation technology to deposit copper layers and form the transistor channel with uniform grain distribution, low resistivity and high thickness uniformity. The technology enables nearly 3

  4. Strain characterization: techniques and applications

    Magazine Articles

    Sun, 1 Feb 2009

    strain the underlying silicon transistor channel leading to a substantial increase ..... strain/stress in individual transistor channel regions [13–17]. This ..... Strain Distribution Around a Transistor Channel in Metal–oxide–semiconductor

  5. Analyzing noise in modern MOSFETs

    Magazine Articles

    Tue, 1 Jun 2010

    such as the position of the dopant atoms in the transistor channel [1] and electrically active defects in the gate ..... coherent processes [8]: Electron tunneling from the transistor channel to the trap (Fig. 2a), with the probability

  6. Organic complementary logic aim of 2 European research projects

    Online Articles

    Fri, 4 May 2012

    methods, like roll-to-roll (R2R) nanoimprint lithography. This high-resolution patterning technique produces transistor channel lengths below 1µm, increasing organic electronics’ performance. Researchers plan to demonstrate an active

  7. BioMEMS: Marrying ICs and biotech

    Magazine Articles

    Mon, 1 Jul 2002

    induced current variation in the transistor channel if an appropriate recognition ..... the accumulated charge in the transistor channel . Figure 2. Structure of the ..... the accumulated charge in the transistor channel . Figure 3 illustrates the

  8. Pushing planar transistors to the limit using strained channel engineering

    Magazine Articles

    Wed, 1 Nov 2006

    D region imparts tensile stress in the n-type transistor channel . This approach has received much attention recently ..... mobilities by applying biaxial tensile-strained Si as a transistor channel have been demonstrated [13]. However, the fundamentally

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