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Sic

Sic news and technical articles from Solid State Technology Magazine. Search Sic latest and archived news and articles

  1. Direct chip bonding, all-SiC design increase power density in Mitsubishi Electric inverter

    Article

    Wed, 23 May 2012

    output inverter with all silicon carbide ( SiC ) power modules that has a power density ..... wires. The module’s chips include a SiC metal oxide semiconductor field effect transistor (MOSFET) and SiC schottky barrier diode (SBD). It is rated

  2. Beyond sapphire: LED substrates from GaN to ZnO, SiC , and Si

    Article

    Mon, 14 May 2012

    currently in production. Silicon carbide ( SiC ) substrates are used for virtually all ..... price. Currently in basic research stage. SiC 3.5 Modified Lely Chemical properties ..... once the epi process is finished. GaN and SiC substrates can be made conductive, thanks

  1. Power electronics grow on SiC and GaN innovation

    Article

    Thu, 5 Apr 2012

    Inc. New materials -- silicon carbide ( SiC ) and gallium nitride (GaN) -- are taking ..... on “Beyond Silicon: Plotting GaN and SiC ’s Path within the $15 Billion Power Electronics ..... limits, other semiconductors, notably SiC and GaN, promise better performance and

  2. AIXTRON sells SiC CVD tool to United Silicon Carbide

    Article

    Fri, 20 Jan 2012

    develop next-generation silicon carbide ( SiC ) devices with AIXTRON SE's VP2400 hot ..... 2012. The 2400 system with Aixtron's SiC Planetary Reactor technology will be used to rapidly develop novel SiC device designs. It achieves high growth

  3. TEL silicon carbide (SiC ) epitaxy tool ordered by Infineon

    Article

    Fri, 16 Mar 2012

    Infineon Technologies (Germany) ordered the Probus- SiC silicon carbide ( SiC ) epitaxy film growth tool from Tokyo Electron Limited (TEL). It will be used to mass produce advanced SiC power devices . The Probus- SiC grows advanced films

  4. SiC semiconductor maker SemiSouth expands capacity

    Article

    Tue, 13 Mar 2012

    Inc., high-voltage silicon-carbide ( SiC ) semiconductor device manufacturer, launched ..... expansion will enable a 50% increase in SiC product volumes for new and existing customers. The expansion will support SiC fabrication growth, servicing customers

  5. Cree's new silicon carbide (SiC ) platform cuts initial LED cost

    Article

    Wed, 8 Feb 2012

    light emitting diodes (LEDs) with its new silicon carbide ( SiC ) LED substrate technology. The Cree XLamp XT-E White LED ..... This product, and Cree's XB-D LED are based on the new SiC platform. Cree expects the cost reducing materials platform

  6. EFM identifies graphene thickness on SiC wafers in ambient conditions

    Article

    Mon, 23 May 2011

    more accurately measures epitaxially grown graphene thickness on SiC wafers than traditional optical microscopy. Figure. The left ..... 100μm in size. For epitaxial graphene grown on silicon carbide ( SiC ) wafers, the nanomaterial's thickness is difficult to determine

  7. Cree LED achieves 254 lumen/watt on SiC , optimized chip/packaging tech

    Article

    Fri, 13 Apr 2012

    s SC 3 Technology Platform, which is used in Cree’s XLamp LEDs. SC³ combines Cree’s advanced silicon carbide ( SiC ) technology, with an advanced LED chip architecture and phosphor, and a new LED package design. Cree makes LEDs and LED lighting

  8. Dow Corning orders AIXTRON epitaxy reactors for power electronics fab

    Article

    Thu, 10 May 2012

    reactor platforms to its silicon carbide ( SiC ) epitaxy capacity for next-generation ..... in Q2 2012, in 10 x 100mm and 6 x 150mm SiC wafer configurations. AIXTRON recently reported ..... processes. Dow Corning offers 4H n+ conductive SiC wafers in test grades for research, in

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