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  1. Toshiba tips Si nanowires for 16nm chips

    Online Articles

    Thu, 17 Jun 2010

    on-current , a record for a Si nanowire transistor, thanks to reduced ..... investigated. Among these options are Si nanowires , which can suppress off-leakage ..... changing the direction of the Si nanowire channel from the <110> to

  2. IME, Stanford partner on Si nanowire -based circuits

    Online Articles

    Wed, 21 Jul 2010

    Technology , 2008, Volume 51, Issue 5, co-authored by Dr. Navab Singh and Professor Dim-Lee Kwong) Toshiba tips Si nanowires for 16nm chips Presenting at the VLSI Symposium, Toshiba says it has developed a silicon nanowire transistor with vastly

  1. Colorful-Si -nanowires -improve-image-sensors

    Online Articles

    Mon, 4 Apr 2011

    A team of researchers from Harvard University and Zena Technologies, led by Kenneth B. Crozier, demonstrated that individual, vertical silicon nanowires can shine in all colors of the spectrum. The Si nanowires are fabricated via e-beam lithography and inductively coupled plasma reactive ion ...

  2. Ge-coated Si nanowires could improve current generation

    Online Articles

    Tue, 1 Mar 2011

    Electrical energy can be generated from a temperature difference in a circuit with suitable materials. In simulations, ETH Zurich scientists show which materials are most likely to succeed in a thermoelectric process.

  3. Leti: Cu-based catalysts can make Si nanowires

    Online Articles

    Wed, 7 Oct 2009

    Researchers at French R&D institute Leti say they have overcome incompatibilities of metallic catalysts with CMOS manufacturing in order to make silicon nanowires, bridging a gap between CMOS technology and bottom-up growth of nanowires and enabling new functionality to be added to chipmaking ...

  4. PHOTONIC FRONTIERS: SILICON PHOTONICS: Nonlinear optical techniques raise silicon photonics promise

    Online Articles

    Wed, 8 Sep 2010

    shown that silicon ( Si ) nanowires have strong nonlinearities ..... nonlinear coefficient of Si nanowires is so much larger than ..... been demonstrated in Si nanowires . These third-order ..... prospects for a range of Si nanowire applications based on

  5. Fully gate-all-around silicon nanowire CMOS devices

    Magazine Articles

    Thu, 1 May 2008

    sequence. We have demonstrated Si nanowires down to 3nm dia. with this ..... cross section as well. GAA Si - nanowire FETs Once the nanowires ..... stress is imparted onto the Si nanowire to the extent that it is ..... extremely small and therefore Si nanowire can bend without breaking

  6. Roadmap requirements for emerging materials

    Magazine Articles

    Sun, 1 Jan 2006

    performance comparisons to Si nanowire FETs, which have exhibited ..... offer several advantages over Si nanowires . They are about 5× thinner ..... lower self-heating than in Si nanowires with comparable dimensions ..... higher on-currents than Si nanowires [14-16]. While CNTs

  7. Emerging materials on the Roadmap for silicon-based IC systems

    Magazine Articles

    Sat, 1 Mar 2008

    performance comparisons to Si nanowire FETs, which have been shown ..... may be ~5× thinner than Si nanowires leading to improved scalability ..... self-heating than that in Si nanowires with comparable dimensions ..... higher on-currents than Si nanowires [15-17]. Transistors

  8. ICPT 2010: Exceeding expectations

    Online Articles

    Mon, 29 Nov 2010

    processes, which may be used for technologies beyond 22nm and after HKMG devices: vertical Si nanowire tunnel FET (CMP is used to open the top of the Si nanowires ) and "Ge for high mobility channels." F. LeQuéré (CEA-Leti) presented a paper

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