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  1. Conference Report: MRS Spring 2012, Day 3

    Article

    Thu, 12 Apr 2012

    capacitors. It was resolved by using a seed layer of the nanoparticle alone as a surface ..... bottom-up fill requires a copper seed layer before the mechanism can initiate. This work found that a seed layer of CVD Mn 4 N (Mn amidinate with NH

  2. Touchscreen display manufacturing method born out of PCB fab sector

    Article

    Mon, 2 Apr 2012

    gaps of 20um and below. Power consumption on the unit averages 3kW. The process can be done additively using an imaged seed layer to create electroless plated nickel or copper with a Rainbow imaged plating resist to create tracks. It can also be

  1. Metallization processes for standardized wide-IO memory applications

    Article

    Sun, 1 Jan 2012

    References 1. D. Shur et al, "Through-silicon via metallization: A novel approach for insulation/barrier/copper seed layer deposition based on wet electrografting and chemical grafting technologies," MRS Fall Meeting 2008, Boston 2. Claudio

  2. Alchimer TSV barrier-layer film shows 100% deposition coverage

    Article

    Tue, 6 Sep 2011

    Alchimer. The coverage also eliminates certain performance and reliability problems that can occur during subsequent seed - layer and fill deposition, such as "electromigration, poor fill results, and high-resistance pathways in interconnect

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