Home>Topics>Reactive Ion Etching
  1. All
  2. Article
  3. Print

Reactive Ion Etching

Reactive Ion Etching news and technical articles from Solid State Technology Magazine. Search Reactive Ion Etching latest and archived news and articles

  1. DRIE expands from MEMS to advanced packaging and more applications

    Article

    Tue, 15 May 2012

    May 15, 2012 -- Deep reactive ion etching (DRIE) is a structuring process originally used to make micro electro mechanical systems (MEMS) . This process enables achieving

  2. MIT designs completely 3D MEMS

    Article

    Wed, 29 Feb 2012

    Fachin says, fabricating 3-D devices in silicon is tricky. MEMS engineers use a common technique called deep reactive ion etching to make partially 3-D structures, in which two-dimensional elements are etched into a wafer. The technique

  1. Si-Ware platform creates MOEMS on-wafer with lithographic alignment

    Article

    Tue, 24 Jan 2012

    optical MEMS (MOEMS) structures can be patterned and etched on silicon on insulator (SOI) wafers using deep reactive ion etching (DRIE) . The structures are then wafer-level packaged and diced to create a one-chip optical system. SiMOST

  2. Improving line roughness by using EUV assist layers

    Print

    Thu, 1 Sep 2011

    further improved to meet the ITRS target of 2.5nm for 2012. Smoothing techniques involve ion milling, ablation, reactive ion etching , and resist reflow methods. Ion milling has shown solid improvement [9]. Resist reflow processes have also shown

  3. Colorful-Si-nanowires-improve-image-sensors

    Article

    Mon, 4 Apr 2011

    and Zena Technologies used a combination of electron beam (e-beam) lithography and inductively coupled plasma reactive ion etching . A smooth wafer of silicon was plasma etched until all that remained were the vertically protruding nanowires

© 2012. PennWell Corporation. All Rights Reserved. PRIVACY POLICY | TERMS AND CONDITIONS