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Reactive Ion Etching

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  1. MIT designs completely 3D MEMS

    Online Articles

    Wed, 29 Feb 2012

    Fachin says, fabricating 3-D devices in silicon is tricky. MEMS engineers use a common technique called deep reactive ion etching to make partially 3-D structures, in which two-dimensional elements are etched into a wafer. The technique

  2. Patterned magnetic media: impact of nanoscale patterning on hard disk drives

    Magazine Articles

    Fri, 1 Sep 2006

    specifications. Following the exposure of the e-beam resist coated master (Fig. 4a), the resist is developed, and reactive ion etching (RIE) is used to transfer the pattern into the master mold substrate ( Fig. 4b ). This topographic master

  1. Single-wafer process for improved metal contact hole cleaning

    Magazine Articles

    Tue, 1 May 2007

    that connect the bit lines and active areas of the device. These connections are formed by a sequence of dry reactive - ion etching (RIE) through a resist film and the interlayer dielectric (ILD), creating a hole that is subsequently filled

  2. Directed density multiplication for patterned disk templates

    Magazine Articles

    Mon, 1 Sep 2008

    assembled patterns into a variety of structures by reactive ion etching [8], lift-off[9], electroplating[10 ..... Cr dots after lift-off. c) Si Pillars after reactive ion etching . Click here to enlarge image The cylindrical domains

  3. System-in-package integration of passives using 3D through-silicon vias

    Magazine Articles

    Thu, 1 May 2008

    copper. Click here to enlarge image Dry-etching. The most widely accepted way of via hole formation is by reactive - ion etching (RIE) [9], of which the patented Bosch-process is the most popular. Typically the vias are anisotropically

  4. Tronics and Alcatel partner on advanced MEMS DRIE

    Online Articles

    Thu, 7 Jun 2007

    manufacturer of custom MEMS components, and Alcatel Micro Machining Systems (AMMS), manufacturer of deep reactive ion etching (DRIE) systems for MEMS and 3D semiconductors, have announced a joint development project on DRIE for extreme

  5. MEMS developments in China

    Magazine Articles

    Sat, 1 Nov 1997

    micromachining, surface micromachining, high aspect ratio reactive ion etching (RIE), and LIGA and electroplating. Silicon ..... Klaassen et al., "Silicon Fusion Bonding and Deep Reactive Ion Etching : A New Technology for Microstructure," Transducers

  6. Carbon dioxide meets the challenge of precision cleaning

    Magazine Articles

    Fri, 1 May 1998

    wafer cleaning. CO2 snow cleaning successfully removes a post-etch "veil" on semiconductor devices. During reactive ion etching (RIE), milled material is deposited on the sidewalls of the photoresist pattern; post-etch ashing used to

  7. rf and microwave plasma for resist and post-etch polymer removal

    Magazine Articles

    Sat, 1 Dec 2001

    conversion to more selective polysilicon etch chemistries. With the demanding requirements for profile control, reactive ion etching (RIE) of polysilicon often utilizes O 2 or He/O 2 gas additives to the typical HBr and Cl 2 chemistries, which

  8. japan

    Magazine Articles

    Sun, 1 Mar 1998

    at 193nm. For a material to be implemented into device fabrication, it must effectively withstand plasma and reactive - ion - etching environments. This has conventionally been achieved using aromatic moieties in the resist polymer. It has been

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