… integrity. Metal ions trapped charge in the oxide, caused shorts, and generally made everyone’s life miserable. The RCA clean , introduced in 1965, was part of the solution. It was an obnoxious mixture of ammonia, hydrogen peroxide, and strong acids …

… cleaning process does not use hydrogen peroxide or HCl, the amount of DI water and HF consumption is 2% of the traditional RCA clean . This is attractive for fabs adopting single-wafer processing, because typically these processes have required more costly …

… implemented in an automatic wet bench (Steag MicroTech) in the IMEC pilot line. Its performance was compared to an optimized RCA clean and the results were always at least as good, and in most cases even better, but at lower cost and lower chemical and DI …

… H atoms and ions under optimized conditions, and d) a nonplasma wet-HF dip for comparison (the last step of a typical RCA clean ). In each case, the reference spectrum was that of a native-oxide-covered Si surface. An increase in transmission …

… more difficult compared to hydrophilic surfaces, the bond could ultimately be better. The hydrophilic method uses a standard RCA clean prior to bonding. The presence of hydroxyl radicals on the mirror-polished silicon surface permits a good initial bond upon …

… 10 min. A conventional immersion system configured for an RCA clean typically includes two QDR tanks and one OFR tank. In such ..... less); we have been able to replace a conventional 7-tank RCA clean system with a 2-tank configuration. Further, we have reduced …

… phosphorus wafers showed variable results depending on the level of contamination. We put some of the test wafers through an RCA clean and analyzed them again. These wafers also yielded a P:Si close to 0.004, demonstrating that the base-level reading …