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Random Access Memory

Random Access Memory news and technical articles from Solid State Technology Magazine. Search Random Access Memory latest and archived news and articles

  1. Samsung-Grandis spotlights MRAM potential—and uphill climb

    Print

    Thu, 1 Sep 2011

    acquired Grandis, a maker of spin-transfer torque random access memory (STT-RAM), a flavor of magnetic random - access memory (MRAM). The only details disclosed were that

  2. Bankrupt Elpida leapfrogs likely acquirer Micron in Q1 DRAM rankings

    Article

    Thu, 24 May 2012

    went into bankruptcy proceedings in February . But this did not stop Elpida from displacing MU in the Q1 dynamic random access memory (DRAM) chip supplier rankings in Q1, outperforming other top DRAM suppliers and the overall sector of the memory

  1. Lower DRAM prices enable more DRAM per smartphone without higher pricetag

    Article

    Fri, 18 May 2012

    May 18, 2012 -- Dynamic random access memory (DRAM) components' percentage of the cost of a smartphone is decreasing, even as DRAM usage in smartphones is on the rise

  2. DRAM partially recovers thanks to Elpida bankruptcy

    Article

    Tue, 15 May 2012

    May 15, 2012 -- The market for dynamic random access memory (DRAM) is expected to partially reverse the drastic losses it incurred in 2011 and achieve revenue growth this year, the result

  3. Advantest DRAM test system clocks 8Gbps test speed on every pin

    Article

    Mon, 14 May 2012

    the next-generation high-speed memory test system, T5511, offering 8Gbps test speed. Designed for dynamic random access memory (DRAM) test, the T5511 performs tests on diverse chip generations and DRAM architectures. It can be deployed

  4. Conference Report: MRS Spring 2012, Day 4

    Article

    Fri, 13 Apr 2012

    Matthias Stender of Cabot Microelectronics described an enabling CMP process for GeSbTe (GST) phase-change random access memory (PRAM). GST has a Young’s modulus and shear modulus comparable to but slightly softer than Cu, and it does

  5. Invensas face-down die packaging replaces SODIMM

    Article

    Wed, 11 Apr 2012

    memory module (SODIMM) in a miniature, soldered-down, ball grid array (BGA) package. The number of dynamic random access memory (DRAM) chips in the package is flexible. A Quad Face Down (QFD) DIMM-IN-A-PACKAGE can replace a single

  6. Elpida bidders and the future mobile DRAM landscape

    Article

    Mon, 9 Apr 2012

    Samsung. Toshiba might want Elpida's DRAM intellectual property (IP) to ensure success of its magnetoresistive random access memory (MRAM) technology. Given Hynix is Toshiba's ODM partner, a joint bid makes sense, Barclays asserts, noting

  7. ISSCC from a memory analyst’s view

    Article

    Fri, 2 Mar 2012

    chips in a multi-chip stack. Although this was not the nonvolatile session, Samsung presented a phase-change random access memory (PRAM) that had a high bandwidth despite its large cell size of 7f². Novel approaches shortened the program

  8. Hynix becomes SK group member, focuses on semiconductor leadership beyond memory

    Article

    Mon, 26 Mar 2012

    semiconductor provider to a global leading semiconductor supplier. This includes bolstering its mobile dynamic random access memory (DRAM), NAND flash, and CMOS image sensor (CIS) sectors for the global transition to mobile electronic devices

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