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acquired Grandis, a maker of spin-transfer torque random access memory (STT-RAM), a flavor of magnetic random - access memory (MRAM). The only details disclosed were that
went into bankruptcy proceedings in February . But this did not stop Elpida from displacing MU in the Q1 dynamic random access memory (DRAM) chip supplier rankings in Q1, outperforming other top DRAM suppliers and the overall sector of the memory
May 18, 2012 -- Dynamic random access memory (DRAM) components' percentage of the cost of a smartphone is decreasing, even as DRAM usage in smartphones is on the rise
May 15, 2012 -- The market for dynamic random access memory (DRAM) is expected to partially reverse the drastic losses it incurred in 2011 and achieve revenue growth this year, the result
the next-generation high-speed memory test system, T5511, offering 8Gbps test speed. Designed for dynamic random access memory (DRAM) test, the T5511 performs tests on diverse chip generations and DRAM architectures. It can be deployed
Matthias Stender of Cabot Microelectronics described an enabling CMP process for GeSbTe (GST) phase-change random access memory (PRAM). GST has a Young’s modulus and shear modulus comparable to but slightly softer than Cu, and it does
memory module (SODIMM) in a miniature, soldered-down, ball grid array (BGA) package. The number of dynamic random access memory (DRAM) chips in the package is flexible. A Quad Face Down (QFD) DIMM-IN-A-PACKAGE can replace a single
Samsung. Toshiba might want Elpida's DRAM intellectual property (IP) to ensure success of its magnetoresistive random access memory (MRAM) technology. Given Hynix is Toshiba's ODM partner, a joint bid makes sense, Barclays asserts, noting
chips in a multi-chip stack. Although this was not the nonvolatile session, Samsung presented a phase-change random access memory (PRAM) that had a high bandwidth despite its large cell size of 7f². Novel approaches shortened the program
semiconductor provider to a global leading semiconductor supplier. This includes bolstering its mobile dynamic random access memory (DRAM), NAND flash, and CMOS image sensor (CIS) sectors for the global transition to mobile electronic devices