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RAM

RAM news and technical articles from Solid State Technology Magazine. Search RAM latest and archived news and articles

  1. Non-volatile-memory-technology-trending-up

    Article

    Fri, 1 Apr 2011

    volatile memory technologies such as FERAM, phase change random access memory (PCM, PC- RAM , PRAM, OUM), magneto-resistive RAM (MRAM, STT RAM , Race Track Memory), resistance switching RAM (RRAM, ReRAM, CB- RAM , PMC- RAM , Nanobridge

  2. imec claims RRAM is smallest based on HfO2

    Article

    Wed, 14 Dec 2011

    International Electron Devices Meeting (IEDM), imec presented the world’s smallest, fully-functional HfO 2 -based resistive RAM (RRAM) cell, with an area of less than 10 x 10nm². The cell architecture could support future device-level nonvolatile

  1. Elpida tips 4-layer mobile DRAM package

    Article

    Fri, 24 Jun 2011

    DRAM device, a new 0.8mm four-layer package of 2GB DDR2 mobile RAM chips, assembled using package-on-package. The four-layer PoP DRAM combines Elpida's small Mobile RAM technology with Akita Elpida's thin-chip processing and molding

  2. Samsung adds Grandis Inc. for memory R&D

    Article

    Tue, 2 Aug 2011

    Valley maker of spin transfer torque random access memory (STT- RAM ). Effective late July 2011, the acquisition includes the full ..... technologies and strong technical capabilities. Its proprietary STT- RAM technology has all the characteristics of a universal memory

  3. Samsung-Grandis spotlights MRAM potential—and uphill climb

    Print

    Thu, 1 Sep 2011

    semiconductor giant Samsung Electronics has acquired Grandis, a maker of spin-transfer torque random access memory (STT- RAM ), a flavor of magnetic random-access memory (MRAM). The only details disclosed were that it closed in July, covering

  4. SEMATECH highlights from VLSI-TSA

    Article

    Thu, 26 Apr 2012

    transistor structures to address performance, power, and cost. Research covers high- k /metal gate (HKMG) materials, resistive RAM (RRAM) memory, and planar and non-planar CMOS technologies. A direct metal bonding interconnect approach for 2.5D and

  5. Conference Report: MRS Spring 2012, Day 1

    Article

    Tue, 10 Apr 2012

    technical symposia that were scheduled to get an early jump on the week. Tutorial topics included phase change materials, NV RAM , compound semiconductors for energy applications, and two sessions related to PV. Additional presentation details can be found

  6. ISSCC from a memory analyst’s view

    Article

    Fri, 2 Mar 2012

    while audience members demanded it. This caused an unusual disquiet in the room. Panasonic spoke about a crosspoint resisitance RAM (ReRAM) that solved many difficulties through the novel use of a very simple back-to-back Zener diode structure to select

  7. IEDM 2011 Preview: Chipworks' must-see picks for IEDM

    Article

    Sun, 4 Dec 2011

    Materials is hosting a panel on "How will RAM Change for the Mobile Computing Era ..... inevitably takes the academic track. S24 covers RAM and specialty memories, which is also a ..... nano device technology, S31 on resistive RAM , S32 on advanced SRAM, S33 on III-V

  8. imec's IEDM papers reach "record number"

    Article

    Wed, 7 Dec 2011

    International Technology Roadmap for Semiconductors (ITRS)-scaling topics. imec will discuss its functional scaled resistive- RAM cell ( RRAM ), for future scaled memories beyond charge-based Flash devices. At IEDM, imec presents excellent performance

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