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ferroelectric random access memory (F- RAM or FRAM) devices built on its new IBM semiconductor ..... to ship approximately 1.9 million F- RAM devices in the coming quarters, and potentially ..... first commercial shipment of 3-volt F- RAM device built on the IBM line in VT, noted
concepts of memories in 2010. The organization is actively recruiting collaborators on RE- RAM , A- RAM , MS-DRAM, and MELRAM memory technologies. RE- RAM researchers include Marie-Paule Besland and Laurent Cario from IMN (Institut des Matériaux
pioneer in spin-transfer torque memory (STT- RAM ) development, today announced the first ..... facility in the United States dedicated to STT- RAM memory technology. MTJs are the building blocks of STT- RAM , and the new fab represents a major step
Yuan Electronics Co., LTD (KYEC) to provide semiconductor assembly and test services (SATS) for its entire line of F- RAM products. KYEC will provide incremental back-end production capabilities in line with demand. "KYEC is currently fitting
develop, verify, and qualify ATMOS SoC- RAM CMOS embedded memory on TSMC's Nexsys ..... agreement, TSMC will fabricate an ATMOS SoC- RAM embedded memory test chip. ATMOS, in turn ..... process by the summer of 2002. The 90nm SoC- RAM will then join ATMOS' silicon-proven
III-V MOSFET, FinFET, and resistive RAM TSMC anneal for gate-last HKMG process ..... SEMATECH experts will report on resistive RAM (RRAM) memory technologies, advanced Fin ..... sematech.org Also read: Next-gen RAM memory tech research seeks industry involvement
The egg study results may be useful in developing random-access memories ( RAM ) based on interactions between electron spins and magnetized surfaces. Spin- RAM is one approach to making future memories that could provide high-speed access
portable GPS, digital cameras, and MP3 players. The Mobile- RAM , available as a DDR and SDR via bond option, comes with two ..... business unit, noted in a statement that the 75nm-based Mobile- RAM s the first of an entirely new product family to be rolled out
nanolithography. Under the deal, JMAR will develop x-ray masks for fabricating high-speed chalcogenide random-access memory (C- RAM ) with 35-50nm features, enabling 16MB and higher densities, for use in military and space applications. The work, based
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