Phase Change Memory news and technical articles from Solid State Technology Magazine. Search Phase Change Memory latest and archived news and articles
BEEcube and Xilinx, created a phase - change memory (PCM) solid-state storage ..... s custom-built "Onyx" phase - change memory module. Image courtesy of ..... improvements to the underlying phase - change memory technology. "You can build
aligned source/drain IBM, Macronix identify phase - change memory failure mode Record photodiode quantum efficiency ..... IM Flash details 25nm NAND November 19, 2010 - Phase - change memory (PCM) devices require high current density (5
July 1, 2011 - Researchers at IBM say they have developed a phase - change memory (PCM) that mitigates drift and demonstrates long-term retention of bits stored, with reliability far closer to what will be
December 19, 2005 - Hitachi Ltd. and Renesas Technology Corp. say they have successfully prototyped low-power phase - change memory cells programmed at a power supply voltage of 1.5V and current of 100mA, consuming about 50% less power consumption
develop chemical vapor deposition (CVD) precursor materials and processes for use in high-volume manufacturing of phase change memory ("PCM") products based on Ovonyx's PCM technology. The agreement also provides certain cross-licensing
International Solid State Circuits Conference (ISSCC), Intel and ST Microelectronics will show how they have pushed phase - change memory (PCM) technology to be able to demonstrate multilevel cell (MLC) devices. Previously, Intel and ST Microelectronics
excellent scalability to nanoscale cell sizes, phase - change memory (PCM) is one of the promising candidates for next ..... L. Perniola et al., "Electrical behavior of phase - change memory cells based on GeTe," IEEE Electron Device Lett
technology. The reversible phase - change memory process provides high performance ..... PCRAM operation, including phase - change memory devices, materials, processing ..... Qimonda also has a pedigree in phase - change memory development, including its
Barbara De Salvo, Head of the Advanced Memory Technology Laboratory at Leti, discussed two papers presented by the consortium at IEDM. The researchers reported on the impact of N-doping in GeTe as a way to boost data retention in phase-change memories (PCMs). They also studied the role of H-related
nanotube interfaces for interconnects and vias; phase - change memory devices ; interfaces during atomic-layer deposition ..... key materials properties of Ge 2 Sb 2 Te 5 (GST) phase - change memory devices. Device operation requires >1V gap between