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Phase Change Memory

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  1. Phase -change memory module debuts at DAC

    Online Articles

    Fri, 3 Jun 2011

    BEEcube and Xilinx, created a phase - change memory (PCM) solid-state storage ..... s custom-built "Onyx" phase - change memory module. Image courtesy of ..... improvements to the underlying phase - change memory technology. "You can build

  2. IBM, Macronix identify phase -change memory failure mode: IEDM Preview

    Online Articles

    Fri, 19 Nov 2010

    aligned source/drain IBM, Macronix identify phase - change memory failure mode Record photodiode quantum efficiency ..... IM Flash details 25nm NAND November 19, 2010 - Phase - change memory (PCM) devices require high current density (5

  1. IBM promises more reliable multibit phase -change memory

    Online Articles

    Fri, 1 Jul 2011

    July 1, 2011 - Researchers at IBM say they have developed a phase - change memory (PCM) that mitigates drift and demonstrates long-term retention of bits stored, with reliability far closer to what will be

  2. Hitachi, Renesas unveil low-power phase -change memory cells

    Online Articles

    Mon, 19 Dec 2005

    December 19, 2005 - Hitachi Ltd. and Renesas Technology Corp. say they have successfully prototyped low-power phase - change memory cells programmed at a power supply voltage of 1.5V and current of 100mA, consuming about 50% less power consumption

  3. ATMI, Ovonyx to develop CVD precursors for phase -change memory

    Online Articles

    Tue, 25 Mar 2008

    develop chemical vapor deposition (CVD) precursor materials and processes for use in high-volume manufacturing of phase change memory ("PCM") products based on Ovonyx's PCM technology. The agreement also provides certain cross-licensing

  4. ISSCC news: Intel, Numonyx disclose "breakthrough" MLC phase -change memory

    Online Articles

    Tue, 5 Feb 2008

    International Solid State Circuits Conference (ISSCC), Intel and ST Microelectronics will show how they have pushed phase - change memory (PCM) technology to be able to demonstrate multilevel cell (MLC) devices. Previously, Intel and ST Microelectronics

  5. Creating phase -change memory devices with GeTe thin films

    Online Articles

    Tue, 1 Nov 2011

    excellent scalability to nanoscale cell sizes, phase - change memory (PCM) is one of the promising candidates for next ..... L. Perniola et al., "Electrical behavior of phase - change memory cells based on GeTe," IEEE Electron Device Lett

  6. Qimonda, Ovonyx to collab on phase -change memory

    Online Articles

    Tue, 16 Jan 2007

    technology. The reversible phase - change memory process provides high performance ..... PCRAM operation, including phase - change memory devices, materials, processing ..... Qimonda also has a pedigree in phase - change memory development, including its

  7. Phase -change -memory -charge-trapping-memories-discussions-with-De-Salvo-Leti

    Online Articles

    Thu, 3 Feb 2011

    Barbara De Salvo, Head of the Advanced Memory Technology Laboratory at Leti, discussed two papers presented by the consortium at IEDM. The researchers reported on the impact of N-doping in GeTe as a way to boost data retention in phase-change memories (PCMs). They also studied the role of H-related

  8. MRS Day 4: TSVs and CMOS+MEMS, wafer bonding, CNT interfaces, ALD for rare-earth HK, graphene redux

    Online Articles

    Mon, 19 Apr 2010

    nanotube interfaces for interconnects and vias; phase - change memory devices ; interfaces during atomic-layer deposition ..... key materials properties of Ge 2 Sb 2 Te 5 (GST) phase - change memory devices. Device operation requires >1V gap between

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