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Phase Change Memory

Phase Change Memory news and technical articles from Solid State Technology Magazine. Search Phase Change Memory latest and archived news and articles

  1. Phase -change memory module debuts at DAC

    Article

    Fri, 3 Jun 2011

    BEEcube and Xilinx, created a phase - change memory (PCM) solid-state storage ..... s custom-built "Onyx" phase - change memory module. Image courtesy of ..... improvements to the underlying phase - change memory technology. "You can build

  2. IBM promises more reliable multibit phase -change memory

    Article

    Fri, 1 Jul 2011

    July 1, 2011 - Researchers at IBM say they have developed a phase - change memory (PCM) that mitigates drift and demonstrates long-term retention of bits stored, with reliability far closer to what will be

  1. Creating phase -change memory devices with GeTe thin films

    Article

    Tue, 1 Nov 2011

    excellent scalability to nanoscale cell sizes, phase - change memory (PCM) is one of the promising candidates for next ..... L. Perniola et al., "Electrical behavior of phase - change memory cells based on GeTe," IEEE Electron Device Lett

  2. IEDM 2011 Preview: Chipworks' must-see picks for IEDM

    Article

    Sun, 4 Dec 2011

    RWTH-Aachen) on redox-based ReRAM, Janice Nickel (HP/Memristors), Andrea Lacaita (Politecnico Milano/ Phase Change Memory ), and Bill Gallagher from IBM finishing up on magnetic memories. So some good solid stuff -- although the courses

  3. World News

    Print

    Mon, 11 Jul 2011

    Microelectronics (IME) for MEMS, packaging, and ASICs. AMERICAS UC/San Diego researchers have developed a phase change memory (PCM) solid-state storage device (SSD) that claims 7 speed improvement over current SSDs. The project has

  4. AVS Symposium 2011: A pre-show highlight reel

    Article

    Tue, 11 Oct 2011

    plasma microdamage); a dry etching process for phase - change memory ; selective etch processes for magnetic materials ..... spintronics; charge-trap memories and 3D approaches; phase - change memory advances; ALD/PEALD CMOS-compatible oxides

  5. Samsung-Grandis spotlights MRAM potential, and NAND's chokehold

    Article

    Wed, 3 Aug 2011

    Ferroelectric memory was the heir-apparent next-gen memory many years ago. "Then it was MRAM, then PCM [ phase - change memory ], then MRAM again," Handy said. And ultimately the industry could devise something entirely new and different

  6. Samsung-Grandis spotlights MRAM potential—and uphill climb

    Print

    Thu, 1 Sep 2011

    initiatives" integrating products from MRAM to NAND to HDD. Keep in mind that Samsung already has put its bet down on phase - change memory (which it calls PRAM), and claims to be shipping actual devices. (Others touting improvements in PCM over

  7. Non-volatile-memory-technology-trending-up

    Article

    Fri, 1 Apr 2011

    polymer printed memory market in 2010 was next highest, followed by ferromagnetic RAM as a distant third. In 2015, phase change memory (PCM, PC-RAM, PRAM, OUM) will be highest. FeRAM will be next highest, followed by zero capacitor RAM

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