Oxide Thickness
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ASM demonstrates ALD, hafnium high-k metal gate at 14nm
… Amsterdam:ASM) created a new 14nm high- k gate dielectric process that achieved less than 6angstroms equivalent oxide thickness (EOT), while maintaining gate leakage below 1A/cm 2 , on a customer's 14nm R&D semiconductor manufacturing …
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AMAT debuts DRAM fab tools for denser transistors
… surface nitrogen content (Fig. 2). Higher nitrogen content leads to higher capacitance, thus enabling equivalent oxide thickness (EOT) scaling. Figure 2. The gate dielectric/oxide. Decoupled plasma nitridation enables high surface nitrogen …
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AMAT's DRAM fab tools for denser transistors
… surface nitrogen content ( Fig. 1 ). Higher nitrogen content leads to higher capacitance, thus enabling equivalent oxide thickness (EOT) scaling, explained David Chu, global products management at Applied Materials. Figure 2. Logic-derived …
