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All-optical wafer measurement system Impulse 300 performs nondestructive multilayer film thickness and uniformity measurements on semiconductor wafers. The system uses lasers to provide noncontact ?-level repeatability
for the light soak effect in CIGS cells. Moisture ingress that is prominent due to the granular structure of the multilayer film stack of the cell: this leads to the substantial changes in sheet and shunt resistance lowering power conversion efficiency
software simultaneously solves for refractive index n(λ), extinction coefficient k(λ), and thicknesses of multilayer film structures. A self-consistent solution is obtained using the SCI generalized dispersion formula to model fitted values
was set at 40K for all laser-pulsed experiments. All concentrations in this paper are quoted in atomic percent. Multilayer film stacks of Si-SiGe were deposited at a low enough temperature that minimal diffusion was expected to have occurred during
electrical characterization of dielectric films and interfacial layers. Techniques such as using XPS for compositional and multilayer film thickness analysis and EM-probe measurement for gate leakage are needed. It was observed that film compositional uniformity is key in realizing
from seven diffracted orders separately at each wavelength. This provides a larger process window for more complex multilayer film stacks, including advanced CMP and copper metallization processes. ASM Lithography, Veldhoven, The Netherlands
biological and chemical agents. She made the discovery when a silicon chip accidentally broke in the process of making a multilayer film of porous silicon on crystalline substrate. She found that she could make the particles different colors and program
uniformity, high repeatability, and low particulate deposition. The system deposits extremely thin single- and multilayer film coatings with angstrom accuracy. Its modular architecture also allows clusterability with other process modules for
makes the technique ideal for single-layer and multilayer Ta and TaN barrier process optimization and control. This multilayer film measurement capability also allows for the simultaneous characterization of seed copper/barrier film stacks, eliminating
advanced dispersion models and an absolute reflectivity measurement technique to measure a majority of the single- and multilayer film stacks used in IC production. Throughput is >200 wafers/hour. NanoSpec 9300 is an automated, noncontact thin