Home>Topics>Mosfet
  1. All
  2. Article
  3. Print
  4. Text

Mosfet

Mosfet news and technical articles from Solid State Technology Magazine. Search Mosfet latest and archived news and articles

  1. Diodes keeps MOSFETs cool with new package

    Article

    Thu, 29 Dec 2011

    Incorporated ( Nasdaq:DIOD ) began packaging MOSFETs in the miniature DFN1212-3 package for ..... equivalent-footprint SOT723 package. The MOSFET pair initially released by Diodes are 20V ..... and power dissipation, the N-channel MOSFET presents a typical R DS(ON) of just

  2. IEDM 2011: InGaAs trigate MOSFET

    Article

    Mon, 28 Nov 2011

    An Intel-led team will unveil trigate FinFET-type quantum well InGaAs MOSFETs with 30nm gates, delivering the best electrostatic performance of any III-V MOSFET . Two key metrics are examined: subthreshold slope and drain-induced barrier

Related Topics:

  1. New power MOSFET package from IRF minimizes form factor

    Article

    Mon, 13 Jun 2011

    x 2mm with <1mm profile package featuring its latest HEXFET MOSFET silicon. The new package is ultra-compact, high density ..... communications equipment. The new packages add to IR's power MOSFET packaging options, miniaturizing form factor with benchmark

  2. SEMATECH highlights from VLSI-TSA

    Article

    Thu, 26 Apr 2012

    Silicon Channel Devices: Exploring alternative high-k gate dielectrics for III-V, Ge and Si MOSFETs . High-field carrier mobility and MOSFET parameter characteristics were improved by atomic layer deposition (ALD) of a thin beryllium oxide

  3. The era of fully-depleted devices

    Article

    Tue, 1 Nov 2011

    variation in undoped ultra-thin FDSOI MOSFETs and its physical understanding," IEDM ..... P. Colinge, "Multiple gate SOI MOSFETs ," Solid-State Electron. 48 (6 ..... Ultimately thin double-gate SOI MOSFETs ," IEEE Trans. On ED, Vol. 50, No

  4. At 22nm, the focus is first order effects

    Article

    Thu, 29 Dec 2011

    fundamental change in transistor architecture since the time when the MOSFET replaced the bipolar transistor as the transistor of choice ..... other 22nm node technologies will continue using planar silicon MOSFETs , the introduction of trigate devices at 22nm is likely to

  5. Direct chip bonding, all-SiC design increase power density in Mitsubishi Electric inverter

    Article

    Wed, 23 May 2012

    include a SiC metal oxide semiconductor field effect transistor ( MOSFET ) and SiC schottky barrier diode (SBD). It is rated at 1 ..... large destructive current during short circuits. The SiC- MOSFET has a built-in current sensor function and a high-speed

  6. Power management semiconductors grow after a rocky Q4 2011

    Article

    Thu, 24 May 2012

    sectors, followed by low-voltage and high-voltage metal-oxide-semiconductor field-effect transistors (LV and HV MOSFETs ). IHS (NYSE: IHS) is a leading source of information, insight and analytics in critical areas that shape today’s

  7. Power discrete semiconductors grow with cloud computing, electric vehicle demand

    Article

    Tue, 22 May 2012

    high-performance semiconductor components such as IGBTs and Super-Junction power MOSFETs to support computing. Electric vehicles (EVs) use IGBTs and MOSFETS for inverter control of acceleration and deceleration. Taxation and foreign production

  8. DRIE expands from MEMS to advanced packaging and more applications

    Article

    Tue, 15 May 2012

    CMOS Image Sensors And the third application covers Power Devices, where DRIE is a competing technology for Super Junction MOSFETs . Niche “innovation” applications are also driving the DRIE market (e.g. micro components for watches). This buoyant

© 2012. PennWell Corporation. All Rights Reserved. PRIVACY POLICY | TERMS AND CONDITIONS