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  1. Low cost AlN substrate technology for HBLED and power semiconductors

    Article

    Sun, 1 Apr 2012

    than 60•. This type of microstructure is shown in the SEM micrograph in Fig. 2a. The dark grains in this figure, which are ..... microstructure will have a de-wetted Y-Al-O phase as shown in the micrograph in Fig. 2b. • These same basic considerations for sintering

  2. HB-LED grade aluminum nitride meets thermal needs of today's LEDs

    Article

    Fri, 24 Feb 2012

    60°C. This type of microstructure is shown in the SEM micrograph in Figure 4A. The dark grains in this figure, which are ..... microstructure will have a de-wetted Y-Al-O phase as shown in the micrograph in Figure 4B. Figure 5. Microstructure sintered at 1675C

  1. Silicon germanium grown monolithically to avoid crystal defects

    Article

    Fri, 16 Mar 2012

    then grown on each elevated area, with minimal separation of neighboring crystals. Image: Perspective scanning electron micrograph (SEM) of an 8um-tall array showing germanium crystals grown on silicon pillars. SOURCE: ETH Zurich. The researchers

  2. SuVolta's DDC transistor technology @ IEDM

    Article

    Thu, 8 Dec 2011

    transistor on Fujitsu Semiconductor's low-power CMOS process is shown in Figure 1. The cross sectional transmission electron micrograph (TEM) shows the transistor fabricated on a planar bulk silicon structure. Figure 1. SuVolta's cross-section TEM The

  3. NEMS sensor improves AFM

    Article

    Fri, 3 Jun 2011

    instrumentation with a nanomechanical cantilever probe and nanophotonic interferometer on a chip. Figure. Scanning electron micrograph (SEM) of the cantilever-microdisksystem. A calculated z-component of the magnetic field is overlaid on the structure

  4. Quantum-dot LED display made via transfer printing

    Article

    Thu, 13 Oct 2011

    and slowly peeling back the stamp. (v)–(vii) Sequential transfer printing of green and blue QDs. b, Fluorescence micrograph of the transfer-printed RGB QD stripes onto the glass substrate, excited by 365 nm UV radiation. The team began by modifying

  5. NIST, CU microchip combines microfluidics and magnetism without power drain

    Article

    Mon, 24 Oct 2011

    by the two lines. The beads start out suspended in salt water above the valves before being trapped in the array. Figure. Micrograph of magnetic microfluidic chip developed by the NIST and CU. Brief pulses of electrical current in the two orange lines generate

  6. Nanowire-based charge-trapping memory optimized by NIST, GMU

    Article

    Mon, 23 May 2011

    a range of dielectric structures to optimize device design. Figures. In this schematic (top) and transmission electron micrograph (TEM image, bottom), a Si nanowire is shown surrounded by a stack of thin dielectric layers. NIST scientists determined

  7. Nanowire-based charge-trapping memory optimized by NIST, GMU

    Article

    Mon, 23 May 2011

    a range of dielectric structures to optimize device design. Figures. In this schematic (top) and transmission electron micrograph (TEM image, bottom), a Si nanowire is shown surrounded by a stack of thin dielectric layers. NIST scientists determined

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