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ASM International N.V. created a new 14nm high-k gate dielectric process that achieved less than 6angstroms equivalent oxide thickness, while maintaining gate leakage below 1A/cm 2 .
marketing, thermal products, discussed the challenges of making FinFET structures using both epitaxial and high- k / metal gate (HKMG) atomic layer deposition (ALD) processes, speaking with Solid State Technology during SEMICON West 2011
many IC manufacturers utilize novel metal gate technologies instead of traditional ..... production process monitor for complex metal gate structures at the 28nm device node ..... of the dimensions of the high- k metal gate (HKMG) structure are critical for
performance (HP) process, the foundry’s most advanced 28nm process which uses their first-generation high- k metal gate (HKMG) technology and second-generation silicon germanium (SiGe) straining, Nvidia shares . NVDA’s management
with ultra-thin gate dielectric. The device uses rubrene single crystals with a 50nm ALD HfO 2 gate dielectric and Au metal gate . The HfO 2 dielectric exhibits a high carrier accumulation of 5×10 13 cm -2 , 5x the number of charge carriers as
WIRE -- GLOBALFOUNDRIES' Fab 1 in Dresden, Germany has shipped 250,000 semiconductor wafers based on 32nm high-k metal gate (HKMG) technology. AMD commented that it will move ahead with 28nm at GLOBALFOUNDRIES. On a unit basis, cumulative
debonding takes place at room temperature. This process flow was performed with a 300mm wafer with active high- k / metal gate (HKMG) CMOS circuits. Imec performs world-leading research in nanoelectronics. Learn more at www.imec.be
will provide our company with a head start of several years, much as Intel achieved in 2007 by introducing high- k metal - gate (HKMG) transistors at the 45nm node.” said Daniel Gitlin. “We believe this breakthrough will extend Tabula
performance, power, and cost. Research covers high- k / metal gate (HKMG) materials, resistive RAM (RRAM) memory ..... Studying the impact of fin doping on high-k/midgap metal gate SOI FinFETs. Threshold voltage can be effectively modulated
dimensions, profiles and roughness, and metal gate undercuts. Similarly, future 3D ..... pre- and post-etch Hi-k/ metal gate sidewall thickness on the fin; and ..... mechanical polishing (CMP), high- k / metal gate (HKMG) thickness and taper on the