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Metal Gate

Metal Gate news and technical articles from Solid State Technology Magazine. Search Metal Gate latest and archived news and articles

  1. ASM demonstrates ALD, hafnium high-k metal gate at 14nm

    Article

    Tue, 6 Dec 2011

    ASM International N.V. created a new 14nm high-k gate dielectric process that achieved less than 6angstroms equivalent oxide thickness, while maintaining gate leakage below 1A/cm 2 .

  2. ASM covers FinFET precursor needs from epitaxy to HKMG ALD

    Article

    Fri, 22 Jul 2011

    marketing, thermal products, discussed the challenges of making FinFET structures using both epitaxial and high- k / metal gate (HKMG) atomic layer deposition (ALD) processes, speaking with Solid State Technology during SEMICON West 2011

  1. Scatterometry measurement for gate ADI and AEI CD of 28nm metal gates

    Print

    Thu, 1 Sep 2011

    many IC manufacturers utilize novel metal gate technologies instead of traditional ..... production process monitor for complex metal gate structures at the 28nm device node ..... of the dimensions of the high- k metal gate (HKMG) structure are critical for

  2. Tight 28nm supply shifts GPU maker shares in Q1

    Article

    Thu, 17 May 2012

    performance (HP) process, the foundry’s most advanced 28nm process which uses their first-generation high- k metal gate (HKMG) technology and second-generation silicon germanium (SiGe) straining, Nvidia shares . NVDA’s management

  3. Conference Report: MRS Spring 2012, Day 5

    Article

    Mon, 16 Apr 2012

    with ultra-thin gate dielectric. The device uses rubrene single crystals with a 50nm ALD HfO 2 gate dielectric and Au metal gate . The HfO 2 dielectric exhibits a high carrier accumulation of 5×10 13 cm -2 , 5x the number of charge carriers as

  4. GLOBALFOUNDRIES signals 32nm yield success with 250k wafers from Fab 1

    Article

    Thu, 22 Mar 2012

    WIRE -- GLOBALFOUNDRIES' Fab 1 in Dresden, Germany has shipped 250,000 semiconductor wafers based on 32nm high-k metal gate (HKMG) technology. AMD commented that it will move ahead with 28nm at GLOBALFOUNDRIES. On a unit basis, cumulative

  5. Imec's via-middle TSV fab 'reveals' contacts by wafer thinning/etch

    Article

    Tue, 20 Mar 2012

    debonding takes place at room temperature. This process flow was performed with a 300mm wafer with active high- k / metal gate (HKMG) CMOS circuits. Imec performs world-leading research in nanoelectronics. Learn more at www.imec.be

  6. Intel 22nm 3D trigate transistors chosen for Tabula 3PLD products

    Article

    Fri, 24 Feb 2012

    will provide our company with a head start of several years, much as Intel achieved in 2007 by introducing high- k metal - gate (HKMG) transistors at the 45nm node.” said Daniel Gitlin. “We believe this breakthrough will extend Tabula

  7. SEMATECH highlights from VLSI-TSA

    Article

    Thu, 26 Apr 2012

    performance, power, and cost. Research covers high- k / metal gate (HKMG) materials, resistive RAM (RRAM) memory ..... Studying the impact of fin doping on high-k/midgap metal gate SOI FinFETs. Threshold voltage can be effectively modulated

  8. Semiconductor metrology beyond 22nm: FinFET metrology

    Article

    Thu, 9 Feb 2012

    dimensions, profiles and roughness, and metal gate undercuts. Similarly, future 3D ..... pre- and post-etch Hi-k/ metal gate sidewall thickness on the fin; and ..... mechanical polishing (CMP), high- k / metal gate (HKMG) thickness and taper on the

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