Memory Devices news and technical articles from Solid State Technology Magazine. Search Memory Devices latest and archived news and articles
their contributions to this project. References 1. S. J. Hudgens, "The future of phase-change semiconductor memory devices ," J. Non-Crys. Solids , 354, 2748 (2008). 2. S. L. Cho et al., "Highly scalable on-axis confined
which they suggest is more reliable than other nanowire-based memory devices . Describing their work, the scientists say the nanowires were ..... fabrication technology than other proposals for nanowire-based memory devices , NIST says.
Ziptronix Inc. is helping a 3D memory device maker replace standard die stacking with its DBI wafer-stacking technology, which has been proven in image sensor packaging.
February 16, 2007 - Researchers at the U. of California-Riverside have designed the building blocks for a memory device that uses telescoping binary or three-stage carbon nanotubes as high-speed, low-power microswitches.
processing techniques for next-generation logic and memory devices . Continued scaling will require new materials and ..... towards usage in high performance logic transistors and memory devices in sub 14 nm advanced technology nodes. “SEMATECH provides
for FinFETs (Part 1) and 3D memory devices , and defect detection capabilities ..... volume manufacturing. Future 3D memory devices will include multiple gate-level ..... an example of the types of 3D memory devices that will require HVM metrology
Verigy V93000 HSM6800 delivers at-speed, high-throughput, automated memory test on ultra-fast GDDR5 graphics memory devices (4Gbps+ per-pin operation). The Korean memory maker selected the V93000 HSM6800 for its test speed headroom
The semiconductor industry is at a crossroads, with new architectures needed to continue scaling both logic and memory devices . In May, Intel surprised many by saying it will switch from a planar to a vertical FinFET transistor at the 22nm
ASA (Thinfilm) and PARC, a Xerox company, entered the next phase of their co-innovation engagement for printed memory devices . This next phase extends the engagement to prototyping the product for manufacturing readiness. PARC and Thinfilm
copper interconnect applications in 3X node and below memory devices . The "DirectFill" chemical vapor deposition (CVD ..... connecting tungsten vias to Cu interconnects in advanced memory devices . A common integration scheme for Cu interconnects