Memory Devices
Memory Devices news and technical articles from Solid State Technology Magazine. Search Memory Devices latest and archived news and articles
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Creating phase-change memory devices with GeTe thin films
… their contributions to this project. References 1. S. J. Hudgens, "The future of phase-change semiconductor memory devices ," J. Non-Crys. Solids , 354, 2748 (2008). 2. S. L. Cho et al., "Highly scalable on-axis confined …
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SEMATECH, centrotherm’s semiconductor-fab subsidiary partner on low-temp processes
… processing techniques for next-generation logic and memory devices . Continued scaling will require new materials and ..... towards usage in high performance logic transistors and memory devices in sub 14 nm advanced technology nodes. “SEMATECH provides …
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Semiconductor metrology beyond 22nm: 3D memory metrology
… for FinFETs (Part 1) and 3D memory devices , and defect detection capabilities ..... volume manufacturing. Future 3D memory devices will include multiple gate-level ..... an example of the types of 3D memory devices that will require HVM metrology …
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Verigy tests GDDR5 at Korean memory producer
… Verigy V93000 HSM6800 delivers at-speed, high-throughput, automated memory test on ultra-fast GDDR5 graphics memory devices (4Gbps+ per-pin operation). The Korean memory maker selected the V93000 HSM6800 for its test speed headroom …
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New architectures, litho schemes take the stage at SEMICON West
… The semiconductor industry is at a crossroads, with new architectures needed to continue scaling both logic and memory devices . In May, Intel surprised many by saying it will switch from a planar to a vertical FinFET transistor at the 22nm …
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Thinfilm-PARC-bring-printed-electronics-commercialization-engagement-forward
… ASA (Thinfilm) and PARC, a Xerox company, entered the next phase of their co-innovation engagement for printed memory devices . This next phase extends the engagement to prototyping the product for manufacturing readiness. PARC and Thinfilm …
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Evolution or revolution: the path for metrology beyond the 22nm node
… and metal gate undercuts. Similarly, future 3D memory devices will include multiple gate-level structures defined ..... shape [7]. This is an example of the types of 3D memory devices that will require HVM metrology. Right: Diagram …
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NIST reveals how layered memory switches work
… allow these structures to come to market sooner. Switches based on transition-metal oxides have great potential as memory devices that retain their information even when the power is turned off. One type is made by stacking four different materials …
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Copper interconnects: Process integration of iALD TaN
December 20, 2011 -- Cu metallization is now widely used in both logic and memory devices . With the adoption of Cu metallization, metal barriers such as TaN are needed to enhance the adhesion of metal to the dielectric …
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Semiconductor metrology beyond 22nm: FinFET metrology
… SEMATECH's authors cover metrology for FinFETs and 3D memory devices , and defect detection capabilities at 22nm. The ..... and metal gate undercuts. Similarly, future 3D memory devices (Part 2 of this series) will include multiple gate …
