Memory Cell
Memory Cell news and technical articles from Solid State Technology Magazine. Search Memory Cell latest and archived news and articles
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Evolution or revolution: the path for metrology beyond the 22nm node
… alternating layers of oxide and silicon. Figure 2. Left: Diagram of pipe-shaped bit cost scalable (P-BiCS) flash memory cell , which consists of pipe-shaped NAND strings folded in a U shape [7]. This is an example of the types of 3D memory …
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ISSCC from a memory analyst’s view
… Matsuoka invented NAND flash only 25 years ago, in 1987, three years after he invented NOR flash. NAND yielded a memory cell very close to the theoretical smallest size of 4f² but had some very undesirable side effects of serial access and high error …
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Semiconductor metrology beyond 22nm: 3D memory metrology
… alternating layers of oxide and silicon. Figure 2. Left: Diagram of pipe-shaped bit cost scalable (P-BiCS) flash memory cell , which consists of pipe-shaped NAND strings folded in a U shape. This is an example of the types of 3D memory devices …
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ISS kicks off with IC industry reality talks
… generated by the chip I/O alone. The end game for magnetic storage has been demonstrated with work showing that a 12 atom memory cell is the smallest possible; any fewer, and stability gives way to quantum effects. Racetrack designs using 60nm wires …
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Novellus film deposition tool suits 3D Flash device fab
… capacitance issues and shifts in the threshold value of a memory cell during programming at small geometries. At sub-20nm ..... films. Each pair of alternating layers is used to form a memory cell , and up to 64 pairs of alternating layers are expected …
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Advanced NAND flash memory scaling prompts ECC acquisitions
… redundancy and read latency as the number of errors corrected increases. In addition, the number of electrons stored in the memory cell is decreasing with each generation of flash memory, resulting in reduced signal/noise requiring enhanced sensing …
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IEDM 2011: Hynix pushes NAND limits
… shows in an IEDM paper a "middle-1Xnm" NAND flash memory cell . Several issues had to be addressed: how to pattern ..... control). [Paper #9.1: A Middle-1X nm NAND Flash Memory Cell (M1X-NAND) with Highly Manufacturable Integration …
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AMAT debuts DRAM fab tools for denser transistors
… performance and speed, overcoming a "memory wall:" the speed of the control circuitry that transfers data between the memory cell array and external data bus. These transistors are denser and more advanced, requiring new toolsets, Applied asserts …
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AMAT's DRAM fab tools for denser transistors
… performance and speed, overcoming a "memory wall:" the speed of the control circuitry that transfers data between the memory cell array and external data bus. These transistors are denser and more advanced, requiring new toolsets, Applied asserts …
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Creating phase-change memory devices with GeTe thin films
… states. But the inherent instability of these materials in their amorphous states reduces the archival life of the memory cell . This presents a critical problem for embedded applications in which working temperatures can be very high and data must …
