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Memory Cell news and technical articles from Solid State Technology Magazine. Search Memory Cell latest and archived news and articles

  1. Anti-fuse memory cell patent granted to Sidense

    Online Articles

    Mon, 23 Aug 2010

    granted Sidense Patent Number 7,755,162, "Anti-fuse Memory Cell ." The '162 patent adds to the Company's patent portfolio ..... Channel anti-fuse array architecture, anti-fuse memory cell , high-speed OTP sensing scheme, and other components

  2. IBM, TDK exploring MRAM

    Online Articles

    Mon, 20 Aug 2007

    effect" to create memory devices with a much more compact memory cell than current approaches. The pair aim to develop a high ..... with a "spin RAM" nonvolatile device , showing a 4kb memory cell using 0.18-micron process technologies with 1/20th

  1. Toshiba touts SONOS structure in new 3D memory

    Online Articles

    Tue, 12 Jun 2007

    June 12, 2007 - Presenting at the VLSI Symposium this week in Japan, Toshiba says it has developed a new 3D memory cell array structure using "through-holes" that could be a potential candidate for higher-density NAND flash devices

  2. Spansion makes diversity play with SONOS-based MirrorBit technology

    Online Articles

    Tue, 27 Nov 2007

    trapping storage technology. The "MirrorBit ORNAND2" family, utilizing 45nm processes, will use a SONOS-like memory cell connected in a NAND memory array. According to Bertrand Cambou, president and CEO of Spansion, the current manufacturing

  3. Protein guides nanocrystal self-assembly for flash memory floating gates

    Magazine Articles

    Mon, 9 Jan 2006

    An improved method for nanocrystal placement for the floating gate of a flash memory cell , using a protein-mediated self-assembly approach, was described at IEDM by Shan Tang, U. of Texas, Austin. A template

  4. IMEC developments

    Magazine Articles

    Fri, 1 Oct 1999

    IMEC, the microelectronics research consortium based in Leuven, Belgium, has developed a dedicated, nonvolatile memory cell that is compatible with standard 0.35µm CMOS processes. The patented HIMOS (High Injection MOS) cell, based on

  5. Toshiba develops embedded DRAM for SOI wafers

    Online Articles

    Mon, 16 Jun 2003

    13, 2003 - Toshiba Corp. says it has developed new memory cell technology that will let chipmakers build DRAM system ..... for broadband network applications by 2006. The new memory cell technology, a 96Kbit cell array dubbed floating body

  6. Intel claims world's first one square micron SRAM cell

    Online Articles

    Fri, 15 Mar 2002

    CA, have reportedly built the world's smallest SRAM memory cell , measuring only one square micron. These cells were ..... generation logic manufacturing processes. The small memory cell size is significant because it will enable Intel to cost

  7. Samsung announces industry-first 45nm embedded flash logic process development

    Online Articles

    Fri, 17 May 2013

    on Samsung’s 45nm eFlash logic process guarantees high reliability and endurance of one million cycles per flash memory cell . The performance results are the industry’s best class and superior to any other solutions currently on the market

  8. SRC, UCLA and ERC utilize atomic layer etch analysis to accelerate development of green chemistries

    Online Articles

    Thu, 21 Mar 2013

    TSV )-enabled technologies for the semiconductor industry. In order to continue the advancement of transistor and memory cell performance, the research will focus on several promising new materials that have been introduced for future generations

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