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granted Sidense Patent Number 7,755,162, "Anti-fuse Memory Cell ." The '162 patent adds to the Company's patent portfolio ..... Channel anti-fuse array architecture, anti-fuse memory cell , high-speed OTP sensing scheme, and other components
effect" to create memory devices with a much more compact memory cell than current approaches. The pair aim to develop a high ..... with a "spin RAM" nonvolatile device , showing a 4kb memory cell using 0.18-micron process technologies with 1/20th
June 12, 2007 - Presenting at the VLSI Symposium this week in Japan, Toshiba says it has developed a new 3D memory cell array structure using "through-holes" that could be a potential candidate for higher-density NAND flash devices
trapping storage technology. The "MirrorBit ORNAND2" family, utilizing 45nm processes, will use a SONOS-like memory cell connected in a NAND memory array. According to Bertrand Cambou, president and CEO of Spansion, the current manufacturing
An improved method for nanocrystal placement for the floating gate of a flash memory cell , using a protein-mediated self-assembly approach, was described at IEDM by Shan Tang, U. of Texas, Austin. A template
IMEC, the microelectronics research consortium based in Leuven, Belgium, has developed a dedicated, nonvolatile memory cell that is compatible with standard 0.35µm CMOS processes. The patented HIMOS (High Injection MOS) cell, based on
13, 2003 - Toshiba Corp. says it has developed new memory cell technology that will let chipmakers build DRAM system ..... for broadband network applications by 2006. The new memory cell technology, a 96Kbit cell array dubbed floating body
CA, have reportedly built the world's smallest SRAM memory cell , measuring only one square micron. These cells were ..... generation logic manufacturing processes. The small memory cell size is significant because it will enable Intel to cost
on Samsung’s 45nm eFlash logic process guarantees high reliability and endurance of one million cycles per flash memory cell . The performance results are the industry’s best class and superior to any other solutions currently on the market
TSV )-enabled technologies for the semiconductor industry. In order to continue the advancement of transistor and memory cell performance, the research will focus on several promising new materials that have been introduced for future generations