Layer Growth
Layer Growth news and technical articles from Solid State Technology Magazine. Search Layer Growth latest and archived news and articles
-
Accurate metrology of epi pattern shift
… applied in the fabrication of linear and mixed signal ICs. However, the ability to align to wafers after epitaxial- layer growth and overlay performance has always been a challenge. Furthermore, epitaxial thickness uniformity and epitaxial shift …
-
First LEDs fabricated on amorphous glass substrates
… is a hole-patterned silicon dioxide (SiO 2 ) layer that further defines the nucleation sites for the emissive- layer growth stages using a local heteroepitaxy process. After polymerization of the pyramidal structures and a final indium tin …
-
Veeco GaN MOCVD tool debut
… new system targets manufacturing of high-brightness LEDs (HBLEDs) and is capable of single- or multi-chamber layer growth ; this allows for LEDs to be manufactured either serially (individual layers of LEDs can be grown sequentially in each …
-
Report from the VLSI Symposium: Planar CMOS to 22nm, but no more
… SEMATECH reported work involving p-channel on SiGe with HK+MG. They used nitridation to suppress interfacial layer growth , and found plasma nitridation was better than thermal nitridation. Without surface nitridation, gate leakage degraded …
-
ASM International and Veeco sign ALD licensing agreement
… pulses of two mutually reactive reactants at moderately high temperatures. This results in atomically thin layer-by- layer growth with conformal deposition over three dimensional structures and perfect control of thickness and uniformity. The advantages …
-
CVD processing platform
… wavelengths for green LEDs) at the wafer level, allowing manufacturers to adjust process controls to optimize epitaxial layer growth . Nanometrics Inc. , Milpitas, CA; ph 408/435-9600, www.nanometrics.com. MBE source for As The ECellAs …
-
Report from VLSI Symposium: Planar CMOS to 22nm, at most
… SEMATECH reported work involving p-channel on SiGe with HK+MG. They used nitridation to suppress interfacial layer growth and found plasma nitridation was better than thermal nitridation. Without surface nitridation, gate leakage degraded …
-
Eco-Snow Systems introduces new, dry semiconductor wafer cleaning process
… cleaning processes. But unlike oxygen plasma cleaning, the new, CO2-based dry process won't promote any oxide layer growth , silicon loss or mobile ion diffusion, which can negatively affect device performance. The new process also can be …
-
Strategies for high-productivity ALD
… films grow continuously on any substrate topology with complete conformality and excellent uniformity. The layer-by- layer growth mechanism allows for atomic-level control of film thickness and properties, and the pinhole-free films exhibit low …
-
World News
… contractor for the Office of Naval Research contract titled, "Isotopically Pure Silicon Carbide and Silicon Epitaxial Layer Growth and Characterization." The contract between the two companies is for 12 months and is worth $307,574, with an …
