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High-K

High-K news and technical articles from Solid State Technology Magazine. Search High-K latest and archived news and articles

  1. ASM demonstrates ALD, hafnium high-k metal gate at 14nm

    Article

    Tue, 6 Dec 2011

    Amsterdam:ASM) created a new 14nm high - k gate dielectric process that achieved ..... additional clustered process steps. The new high - k process enables faster switching and ..... extending the viability of hafnium-based high - k dielectrics. Planar and 3D devices

  2. Strained silicon and HKMG take the stage at 22nm

    Article

    Fri, 30 Dec 2011

    replacement gate technology. Scaled high - k based gate dielectrics are considered ..... mandate a transition to replacement gate high - k /metal gate (HKMG) technology. However, gate-first high - k 22nm devices are still being developed

  1. Tight 28nm supply shifts GPU maker shares in Q1

    Article

    Thu, 17 May 2012

    28nm high performance (HP) process, the foundry’s most advanced 28nm process which uses their first-generation high - k metal gate (HKMG) technology and second-generation silicon germanium (SiGe) straining, Nvidia shares . NVDA

  2. SEMATECH highlights from VLSI-TSA

    Article

    Thu, 26 Apr 2012

    power, and cost. Research covers high - k /metal gate (HKMG) materials, resistive ..... performance also improved with H 2 O-based high - k , suggesting that H 2 O-based ALD ..... Channel Devices: Exploring alternative high - k gate dielectrics for III-V, Ge and

  3. Intel (INTC) plans high capex and fast node shrinks, expects chipmaker consolidation

    Article

    Fri, 11 May 2012

    Intel has sustainable advantages in manufacturing, its product roadmaps, process leadership, technology leadership ( high - k , 3D transistors ), and scale, FBR said. Average capital costs per silicon square inch keep increasing, said Smith, but

  4. Scatterometry measurement for gate ADI and AEI CD of 28nm metal gates

    Print

    Thu, 1 Sep 2011

    monitoring of the dimensions of the high - k metal gate (HKMG) structure are critical ..... dimensional measurement and control of a 28nm high - k metal gate for two layers: after ..... nanometer-sized variations in the high - k and metal gate recess relative to poly

  5. Intel’s Q1 2012 earnings: Key takeaways

    Article

    Thu, 19 Apr 2012

    Intel has sustainable advantages in manufacturing, its product roadmaps, process leadership, technology leadership ( high - k , 3D transistors), and scale. However, tablets and smartphones are tempering growth in Intel's core business, with

  6. Semiconductor wafer fab equipment trends: Deposition

    Article

    Tue, 10 Apr 2012

    Gains were seen in the “other” portion, namely atomic layer deposition (ALD). ALD is used for the high - k gate dielectric in high - k /metal gate (HKMG) devices. Other as a whole picked up 4% share. For more about the top players in

  7. Evolution or revolution: the path for metrology beyond the 22nm node

    Article

    Thu, 1 Mar 2012

    over fin after chemical mechanical polishing (CMP), high - k /metal gate thickness and taper on the fin and recess after ..... Lin, E., Wu, W.L., Bunday, B. "Nonplanar high - k dielectric thickness measurements using CD-SAXS." Proc

  8. GLOBALFOUNDRIES signals 32nm yield success with 250k wafers from Fab 1

    Article

    Thu, 22 Mar 2012

    BUSINESS WIRE -- GLOBALFOUNDRIES' Fab 1 in Dresden, Germany has shipped 250,000 semiconductor wafers based on 32nm high - k metal gate (HKMG) technology. AMD commented that it will move ahead with 28nm at GLOBALFOUNDRIES. On a unit basis

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