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High K Metal Gate

High K Metal Gate news and technical articles from Solid State Technology Magazine. Search High K Metal Gate latest and archived news and articles

  1. ASM demonstrates ALD, hafnium high -k metal gate at 14nm

    Article

    Tue, 6 Dec 2011

    ASM International N.V. created a new 14nm high-k gate dielectric process that achieved less than 6angstroms equivalent oxide thickness, while maintaining gate leakage below 1A/cm 2 .

  2. Tight 28nm supply shifts GPU maker shares in Q1

    Article

    Thu, 17 May 2012

    high performance (HP) process, the foundry’s most advanced 28nm process which uses their first-generation high - k metal gate (HKMG) technology and second-generation silicon germanium (SiGe) straining, Nvidia shares . NVDA’s management

  1. SEMATECH highlights from VLSI-TSA

    Article

    Thu, 26 Apr 2012

    reported on innovative materials and transistor structures to address performance, power, and cost. Research covers high - k / metal gate (HKMG) materials, resistive RAM (RRAM) memory, and planar and non-planar CMOS technologies. A direct metal

  2. Semiconductor wafer fab equipment trends: Deposition

    Article

    Tue, 10 Apr 2012

    other” portion, namely atomic layer deposition (ALD). ALD is used for the high- k gate dielectric in high - k / metal gate (HKMG) devices. Other as a whole picked up 4% share. For more about the top players in deposition and other

  3. Scatterometry measurement for gate ADI and AEI CD of 28nm metal gates

    Print

    Thu, 1 Sep 2011

    monitoring of the dimensions of the high - k metal gate (HKMG) structure are critical ..... measurement and control of a 28nm high - k metal gate for two layers: after-develop ..... beyond. Experiment and results High - k metal gate ADI. The first study was designed

  4. GLOBALFOUNDRIES signals 32nm yield success with 250k wafers from Fab 1

    Article

    Thu, 22 Mar 2012

    BUSINESS WIRE -- GLOBALFOUNDRIES' Fab 1 in Dresden, Germany has shipped 250,000 semiconductor wafers based on 32nm high - k metal gate (HKMG) technology. AMD commented that it will move ahead with 28nm at GLOBALFOUNDRIES. On a unit basis, cumulative

  5. Imec's via-middle TSV fab 'reveals' contacts by wafer thinning/etch

    Article

    Tue, 20 Mar 2012

    complete, debonding takes place at room temperature. This process flow was performed with a 300mm wafer with active high - k / metal gate (HKMG) CMOS circuits. Imec performs world-leading research in nanoelectronics. Learn more at www.imec

  6. Evolution or revolution: the path for metrology beyond the 22nm node

    Article

    Thu, 1 Mar 2012

    etch), buried oxide (BOX) recess under fin, gate height over fin after chemical mechanical polishing (CMP), high - k / metal gate thickness and taper on the fin and recess after gate etch, and spacer profile ( Fig. 1 ). Figure 1. Left: Cross

  7. Intel 22nm 3D trigate transistors chosen for Tabula 3PLD products

    Article

    Fri, 24 Feb 2012

    node will provide our company with a head start of several years, much as Intel achieved in 2007 by introducing high - k metal - gate (HKMG) transistors at the 45nm node.” said Daniel Gitlin. “We believe this breakthrough will extend Tabula

  8. Semiconductor wafer fab equipment trends: Etch

    Article

    Mon, 9 Apr 2012

    central issue. In 2012, 3x DRAM, 2x NAND Flash, and advanced logic will ramp in volumes, utilizing advanced high - k metal gate (HKMG) architectures. Etch should see benefits as capacity additions are incorporated. Silicon etch grew in 2011

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