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ASM International N.V. created a new 14nm high-k gate dielectric process that achieved less than 6angstroms equivalent oxide thickness, while maintaining gate leakage below 1A/cm 2 .
not compatible with polysilicon gate electrodes, a metal (typically aluminum) is used instead, hence the name high - k metal gate (HKMG). Although at least one leading manufacturer is already in full production with advanced generation HKMG
results of the company's high - k / metal gate transistor development at the ..... with better results for NMOS high - k / metal gate transistors. For five years ..... updated performance data for its high - k metal gate NMOS transistor: a drive current
On Nov. 4, Intel Corp. announced that Intel Fellow Robert Chau was to present results of Intel's high - k / metal gate transistor development at the International Gate Insulator Workshop in Tokyo, Japan, on Nov. 6. The new high
The aggressive scaling of advanced devices has necessitated the search for a suitable high- k gate dielectric.
Samsung's announcement that it has completed testing of its 32nm high - k / metal gate architecture, ramping to volume possibly by year's end—and following quickly with a 28nm version—has the industry buzzing
experimental values obtained for the relaxation energies indicate that the defects observed by the drain current RTS in high - k / metal gate devices are oxygen vacancies in the SiO 2 layer close to the Si substrate. This analysis can be extended to other
Symposium on Advanced Gate Stack Technology have narrowed their consensus about their strategies for implementing high - k / metal gate stacks in 32nm- and beyond process technologies. Among the discussions at the event, hosted by SEMATECH and co
WaferNEWS , Mukesh Khare, project manager for IBM's high - k / metal - gate development, discusses details of the company's new high - k / metal - gate (HK+MG) transistor technology, a "gate first
CEA-Leti installed a CVD tool from Altatech, a subsidiary of Soitec, to research sub-20nm phase-change memory (PCM) and high - k metal gate (HKMG) semiconductor devices.