Hfo
Hfo news and technical articles from Solid State Technology Magazine. Search Hfo latest and archived news and articles
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Materials modification with HfO for next-gen semiconductor devices
… semiconductor industry's experience with hafnium oxide ( HfO ) , which is already in production. Listen to Wilk ..... increase of the effective k value of the stack. Figure. HfO /MgO stack vs. pure HfO . One method of EOT scaling is to deposit a cap layer …
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MRS Spring Day 5: Thin films for sensors, searching for a higher- k dielectric
… searches for a higher- k dielectric than HfO 2 and carbon-doped TaN metal gate compositions ..... dielectrics similar to today's favorite HfO 2 , but with a higher k value in the range ..... high- k gate dielectric, in this case HfO 2 . In this technique, 50nm metal gate …
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imec claims RRAM is smallest based on HfO2
… the recent IEEE International Electron Devices Meeting (IEDM), imec presented the world’s smallest, fully-functional HfO 2 -based resistive RAM (RRAM) cell, with an area of less than 10 x 10nm². The cell architecture could support future device …
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MRS Spring Day 2: Combinatorial screening for Ta metal gates, supercritical CO2 tricks, CMP's too thirsty
… combinatorial screening for metal gate alloys contacting a HfO 2 gate dielectric, more uses for supercritical CO 2 , and various ..... of Ta metal gate alloys that can be in direct contact with a HfO 2 gate dielectric. The alloy grade consists of sputtering a …
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IRPS 2013: Oxygen interstitials can impact RRAM retention time
… electrodes on the retention performance of HfO x based RRAM cells by experiments, atomistic ..... phenomenon to oxygen interstitials in the HfO 2 , and TiN-Ti's ability to basically ..... Technical Program Chair. Atomistic structure of HfO 2 with an O i intersitials leading the the …
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High-k etch performance for next-generation logic gate stacks
… gate oxides, high- k gate oxide based on HfO x will be integrated into the filmstack ..... Chang studied plasma etching of ZrO 2 and HfO 2 in BCl 3 /Cl 2 plasmas as a function of ..... investigated low temperature (60°C) HfO x etching based on BCl 3 chemistry and have …
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Improving workfunction control of metal gate electrodes
… contact with different dielectrics (SiO 2 and HfO 2 ) to oxidizing/reducing ambient [3 ..... impact of monolayers of hafnium oxide ( HfO 2 ) on the barrier height and the corresponding ..... Experiments High- k dielectric stacks featuring HfO 2 or La 2 Hf 2 O 7 (LHO) were considered …
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Integrating dual workfunction metal gates in CMOS
… 15] reported a method depositing TiN over an HfO 2 dielectric followed by an oxide hardmask ..... applied overall. This process produces a TiN/ HfO 2 interface for the pMOS gate stack and a TaSiN/ HfO 2 interface for nMOS. We also reported a similar …
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High- k gate deposition: ALD or CVD?
… and the industry is converging on either HfO 2 or HfSiON. The choice of gate dielectric ..... overall process flow. Many groups prefer HfO 2 because of the expected higher dielectric ..... higher channel mobility than devices using HfO 2 . There are additional reports that a …
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Today's top reliability challenges
… phenomenon to oxygen interstitials in the HfO 2 , and TiN-Ti's ability to basically ..... FIGURE 1. Figure 1. Atomistic structure of HfO 2 with an O i intersitials leading the the ..... an O i interstitial creating more V o in HfO 2 (right). A third paper on memory focuses …
