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the recent IEEE International Electron Devices Meeting (IEDM), imec presented the world’s smallest, fully-functional HfO 2 -based resistive RAM (RRAM) cell, with an area of less than 10 x 10nm². The cell architecture could support future device
device uses rubrene single crystals with a 50nm ALD HfO 2 gate dielectric and Au metal gate. The HfO 2 dielectric exhibits a high carrier accumulation ..... at 2V applied voltage indicates a high quality HfO 2 dielectric. Top gate devices are stable in
double patterning lithography , through silicon vias ( TSVs ) and TSVs with copper fill, and high- k metal gate ( HKMG ) with HfO 2 and ZrO 2 likely technologies to be implemented on semiconductor fab lines in 2012. Other expectations from the semiconductor
S35 on high mobility, and S36 on biosensing and solar conversion. Papers of interest for me in the RRAM session are 31.2 on HfO -based RRAM, bipolar ReRAM by Panasonic ( 31.4 ), a WO x RRAM by Macronix ( 31.5 ), and a vertical RRAM by Samsung