Hafnium Oxide
Hafnium Oxide news and technical articles from Solid State Technology Magazine. Search Hafnium Oxide latest and archived news and articles
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ASMC 2011: EUV, image sensors, and a capital perspective
… edge devices to demanding high-end products, made on 300mm wafers using 40nm processes and exotic materials such as hafnium oxide and tantalum oxide. Some 1.7 billion image sensors were sold in 2010, he said, with continuing pressure for smaller …
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High-k semiconductor materials from a chemical manufacturer perspective
… generation of devices. The industry quickly focused on hafnium oxide (HfO 2 ) and zirconium oxide (ZrO 2 ), with HfO 2 , or a hafnium oxide -based material, the preferred choice. Hafnium sources …
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ALD enables thin films for next-generation flash and NVM
… relatively low k value of aluminum oxide limits the scaling potential of this material. Higher- k alternatives such as hafnium oxide are actively being investigated but options are typically severely limited due to intrinsically lower band gaps and …
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Atomic layer deposition goes mainstream in 22nm logic technologies
… R81, 1986. 2. D. Triyoso, et al., "Physical and Electrical Characteristics of Atomic-Layer-Deposited Hafnium Oxide Formed Using Hafnium Tetrachloride and Tetrakis(ethylmethylaminohafnium)," Jour. of Appl. Physics, Vol. 97 …
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Vanderbilt researchers make filler-less freestanding nanofilms
… This has led semiconductor manufacturers to retool their process to use "high- k " dielectric materials, such as hafnium oxide , because they have much higher electrical resistance. "We have made high- k nanoparticle films that could be cheaper …
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Toshiba, SanDisk ramping 43nm NAND flash with HK+MG, 3b/cell
… that for 43nm the fab has added new 1.3NA immersion scanners and new deposition tools for high- k /metal gates. A hafnium oxide is used for the inter-poly dielectric separating the control gate and the floating gate, and a metal silicide replaces …
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Roadmap requirements for emerging materials
… manufacturing methods for gate electrode formation cannot be used. Germanium oxynitride [2, 3], aluminum oxide [4], hafnium oxide [4], and zirconium oxide [5] high- k dielectrics have been implemented with Ge channel transistors with varying …
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Emerging materials on the Roadmap for silicon-based IC systems
… paramount to exploiting the benefits of Ge transistor technology. Germanium oxynitride [2, 3], aluminum oxide [4], hafnium oxide [4], and zirconium oxide [5] high- k dielectrics have been implemented with Ge channel transistors with varying …
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Improving workfunction control of metal gate electrodes
… at the monolayer (ML) level. Our observations are consistent with previous reports of the impact of monolayers of hafnium oxide (HfO 2 ) on the barrier height and the corresponding Φ eff values at the interfaces of SiO 2 with polycrystalline …
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Technology News
… that for 43nm the fab has added new 1.3NA immersion scanners and new deposition tools for high- k /metal gates. A hafnium oxide is used for the inter-poly dielectric separating the control gate and the floating gate, and a metal silicide replaces …
