Hafnium Oxide
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ASM covers FinFET precursor needs from epitaxy to HKMG ALD
… layers require higher- k materials , the material will get thinner noted Hollands. "We may still be using a basic hafnium oxide material -- but adding a higher- k cap layer that would be very thin -- on the order of several Angstroms, instead …
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AVS-ALD, Day 2: Manufacturability takes center stage
… including precursor modifications and equipment design considerations. While Intel has successfully implemented ALD for hafnium oxide deposition, Trelles noted that the technology is only half the battle -- the big question now is cost-of-ownership …
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AVS Symposium 2011: A pre-show highlight reel
… approaches; phase-change memory advances; ALD/PEALD CMOS-compatible oxides for RRAM; resistive switching in hafnium - oxide RRAM; embedded HfO2-based cells for RRAM; Process characterization for PCM and ST-MRAM Nanowires/nanoparticles …
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ASMC 2011: EUV, image sensors, and a capital perspective
… edge devices to demanding high-end products, made on 300mm wafers using 40nm processes and exotic materials such as hafnium oxide and tantalum oxide. Some 1.7 billion image sensors were sold in 2010, he said, with continuing pressure for smaller …
