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Hafnium Oxide

Hafnium Oxide news and technical articles from Solid State Technology Magazine. Search Hafnium Oxide latest and archived news and articles

  1. AMAT rolls out HK+MG lineup

    Online Articles

    Tue, 31 Jul 2007

    of ~2Å. Applied Materials has released an ALD for hafnium - oxide HK dielectric chamber for the Centura platform that appears ..... pFETs. Certain "cap oxides" when deposited over hafnium oxide form dipoles in the vertical dimension, so the gate

  2. IRPS 2013: Oxygen interstitials can impact RRAM retention time

    Online Articles

    Tue, 16 Apr 2013

    RRAM consists of two metal electrodes and a hafnium oxide between those, where the hafnium oxide acts as a variable resistor (see figure ..... example they used TiN/Ti to sandwich the hafnium oxide . They showed that the Pt/Pt electrode device

  1. Today's top reliability challenges

    Magazine Articles

    Fri, 1 Mar 2013

    RAM consists of two metal electrodes and a hafnium oxide between those, where the hafnium oxide acts as a variable resistor. The authors ..... example they use a TiN-Ti to sandwich the hafnium oxide . They showed that the Pt/Pt electrode device

  2. Advancing CNTs for next-gen chips

    Online Articles

    Thu, 8 Nov 2012

    within a conventional wafer fabrication infrastructure." SEM image of carbon nanotubes deposited on a trench coated in hafnium oxide (HfO2) showing extremely high density and excellent selectivity. Scale bar: 2μm. (Credit: IBM)

  3. Materials modification with HfO for next-gen semiconductor devices

    Online Articles

    Mon, 10 Jan 2011

    semiconductor industry's experience with hafnium oxide (HfO) , which is already in ..... of another material on top of hafnium oxide to obtain a higher k value without ..... titanium ions would diffuse into the hafnium oxide , thereby modifying the network

  4. ASM covers FinFET precursor needs from epitaxy to HKMG ALD

    Online Articles

    Fri, 22 Jul 2011

    layers require higher- k materials , the material will get thinner noted Hollands. "We may still be using a basic hafnium oxide material -- but adding a higher- k cap layer that would be very thin -- on the order of several Angstroms, instead

  5. AVS-ALD, Day 2: Manufacturability takes center stage

    Online Articles

    Wed, 29 Jun 2011

    including precursor modifications and equipment design considerations. While Intel has successfully implemented ALD for hafnium oxide deposition, Trelles noted that the technology is only half the battle -- the big question now is cost-of-ownership

  6. AVS Symposium 2011: A pre-show highlight reel

    Online Articles

    Tue, 11 Oct 2011

    approaches; phase-change memory advances; ALD/PEALD CMOS-compatible oxides for RRAM; resistive switching in hafnium - oxide RRAM; embedded HfO2-based cells for RRAM; Process characterization for PCM and ST-MRAM Nanowires/nanoparticles

  7. Chemistry and process challenges in advanced materials processing

    Magazine Articles

    Fri, 1 Jul 2005

    High- k dielectric films including aluminum oxide, hafnium oxide , and hafnium silicate are deposited using liquid metal ..... Bartholomew, W. Nieveen, “Atomic Layer Deposition of Hafnium Oxide and Hafnium Silicate Thin Films Using Liquid Precursors

  8. High-k goes to production, but arguments continue

    Magazine Articles

    Tue, 1 Jul 2008

    sputtering damage to the exposed hafnium oxide surface. Worse, PVD requires ..... without damage to the underlying hafnium oxide . If not, then the etch must ..... solution, doesn’t damage the hafnium oxide because it doesn’t exist yet

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