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Hafnium Oxide

Hafnium Oxide news and technical articles from Solid State Technology Magazine. Search Hafnium Oxide latest and archived news and articles

  1. ASM covers FinFET precursor needs from epitaxy to HKMG ALD

    Article

    Fri, 22 Jul 2011

    layers require higher- k materials , the material will get thinner noted Hollands. "We may still be using a basic hafnium oxide material -- but adding a higher- k cap layer that would be very thin -- on the order of several Angstroms, instead

  2. AVS-ALD, Day 2: Manufacturability takes center stage

    Article

    Wed, 29 Jun 2011

    including precursor modifications and equipment design considerations. While Intel has successfully implemented ALD for hafnium oxide deposition, Trelles noted that the technology is only half the battle -- the big question now is cost-of-ownership

  1. AVS Symposium 2011: A pre-show highlight reel

    Article

    Tue, 11 Oct 2011

    approaches; phase-change memory advances; ALD/PEALD CMOS-compatible oxides for RRAM; resistive switching in hafnium - oxide RRAM; embedded HfO2-based cells for RRAM; Process characterization for PCM and ST-MRAM Nanowires/nanoparticles

  2. ASMC 2011: EUV, image sensors, and a capital perspective

    Article

    Thu, 19 May 2011

    edge devices to demanding high-end products, made on 300mm wafers using 40nm processes and exotic materials such as hafnium oxide and tantalum oxide. Some 1.7 billion image sensors were sold in 2010, he said, with continuing pressure for smaller

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