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Gate Last

Gate Last news and technical articles from Solid State Technology Magazine. Search Gate Last latest and archived news and articles

  1. SEMATECH highlights from VLSI-TSA

    Article

    Thu, 26 Apr 2012

    advances in the following areas: Silicon Channel Devices: Evaluating stress-induced leakage current (SILC) in full gate - last (FGL) HKMG devices to address sources of SILC and propose possible process options for improvement. A high quality

  2. Technical forecast: 22nm devices

    Article

    Sun, 1 Jan 2012

    high-performance applications. Gate last approach to become the norm Art Zafiropoulo ..... move to metal gate first or metal gate last . Today, this is still a hot topic ..... say that everyone is going to use a gate last approach at 20nm. Currently 22nm

  1. IEDM 2011 Preview: Chipworks' must-see picks for IEDM

    Article

    Sun, 4 Dec 2011

    abstract does not say whether it's gate-first or gate - last -- it should be gate - last , but we'll see! Paper 15.6 talks about process ..... describe an atomic layer oxidation technique for a gate - last process ( 28.5 ). Sony, Panasonic and Fujitsu

  2. Intel’s first 22nm trigate transistor products debut

    Article

    Tue, 24 Apr 2012

    architecture of the chip (“tock”) was altered the next. Intel accelerated this model, doing both in the new chips. " Gate - last , scaling, and now the move to 3D trigate should be meaningful in driving improved performance/watt at the high

  3. Samsung, IBM and GlobalFoundries look to the future: A report from the Common Platform Technology Forum

    Article

    Thu, 15 Mar 2012

    and is presently working with 20nm gate - last and 14nm FinFET. Pre-revenue ..... occupied by MPU and GPU functions. Gate last HkMG at 20nm has been selected to meet ..... minimum pitch M1; both are HkMG gate last . Their 20nm devices are currently

  4. Will 22nm need a mid-node?

    Article

    Mon, 2 Jan 2012

    would move to metal gate first or gate last . Today, this is still a hot topic ..... although I posit that everyone will use gate - last manufacturing at 20nm. Currently ..... the first company to implement gate last ; others such as IBM and foundries like

  5. Common Technology Platform Forum looks to the future

    Article

    Sun, 1 Apr 2012

    its roots in 65nm, and is presently working with 20nm gate - last and 14nm FinFET. Pre-revenue investment in the 20nm ..... has up to now been occupied by MPU and GPU functions. Gate last HkMG at 20nm has been selected to meet these needs for

  6. IBM, Samsung, GLOBALFOUNDRIES, ARM to keynote Common Platform Technology Forum

    Article

    Thu, 23 Feb 2012

    Patton announced that the Platform would be moving to a gate - last high- k metal-gate (HKMG) technology at the 20nm node. Read : Common Platform Goes Gate - Last -- at Last! from blogger Dick James, Chipworks. The

  7. Applied heats up RTP for 2Xnm with backside wafer heating

    Article

    Fri, 1 Jul 2011

    with discussion of <3xnm transistor structures, part of the debate between gate-first/ gate - last high- k /metal gate (HKMG) has been that gate last isn't as affected by anneal temperatures. Ramamurthy didn't elaborate whether any customers

  8. Technology trends to watch

    Print

    Fri, 1 Jul 2011

    entered the era of materials-enabled scaling in the device roadmaps," Steegen said. Noting that both gate-first and gate - last high-k metal gate integration schemes have been successfully used in manufacturing (the key difference between the

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