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Gate Last news and technical articles from Solid State Technology Magazine. Search Gate Last latest and archived news and articles

  1. TSMC chooses gate -last on 28nm CMOS

    Online Articles

    Fri, 26 Nov 2010

    drove its decision to select the gate - last approach: speed, power, reliability ..... TSMC’s data indicates that a gate - last approach enables process knobs that ..... manufacturability standpoint, by using gate - last , all the thermal/high-temperature

  2. Integrating high-k /metal gates: gate-first or gate -last ?

    Magazine Articles

    Mon, 1 Mar 2010

    traditionally referred to as gate first and gate last . What are the integration options ..... metal inserted poly-silicon) and gate - last (also called RMG, replacement metal ..... complexity advantage of gate-first over gate - last . The second way of integrating HK

  1. Integrating high-k /metal gates: gate-first or gate -last ?

    Online Articles

    Mon, 1 Mar 2010

    traditionally referred to as gate first and gate last . What are the integration options ..... metal inserted poly-silicon) and gate - last (also called RMG, replacement metal ..... complexity advantage of gate-first over gate - last . The second way of integrating HK

  2. IEDM 2009: HKMG gate-first vs gate -last options

    Online Articles

    Mon, 7 Dec 2009

    generations. He compared gate-first and gate - last advantages and disadvantages, the ..... workfunction." High- k first, gate - last structure. (Source: Hoffman ..... the only way to do that is with a gate - last process strategy (sometimes called

  3. TSMC-anneal-for-gate -last -HKMG-IEDM-preview

    Online Articles

    Thu, 4 Nov 2010

    and resistive RAM TSMC anneal for gate - last HKMG process Imec IEDM presentations ..... Singapore). Between gate-first and gate - last , TSMC (Hsinchu, Taiwan) is pursuing a gate - last approach to high-k/metal gate

  4. Analyst's take: Why the gate first-last debate isn't over

    Online Articles

    Mon, 24 Jan 2011

    from a gate-first approach to a gate - last approach starting with the 20nm process ..... led by IBM and CPA partners, and a gate - last approach being implemented by Intel ..... Gartner foundry analyst Sam Wang. " Gate last can use spacer for stress tuning

  5. Gate structure and 3D stacking winners will determine semiconductor industry direction

    Online Articles

    Tue, 11 Jan 2011

    be "metal gate first" or "metal gate last ." IBM is leading the metal gate first method and Intel is pushing metal gate last . It will be interesting to see the ..... 22nm node, the gate-first/ gate - last debate winner will set the direction

  6. TSMC-work-on-Si-interposers-TSV-die-stacking

    Online Articles

    Fri, 26 Nov 2010

    interposers , die stacking with through-silicon vias (TSV) , and gate - last transistor fab. Figure. Packaging and 3D IC trend. SOURCE: TSMC ..... die stacking using TSVs, said Ma (Figure). Read about Ma's gate - last points here.

  7. Will 22nm need a mid-node?

    Online Articles

    Mon, 2 Jan 2012

    would move to metal gate first or gate last . Today, this is still a hot topic ..... although I posit that everyone will use gate - last manufacturing at 20nm. Currently ..... the first company to implement gate last ; others such as IBM and foundries like

  8. Imec at SEMICON West: Interview with Luc Van den hove

    Online Articles

    Tue, 10 Jul 2012

    generation logic devices, imec successfully demonstrated higher-k dielectric with Replacement Metal Gate (Metal- Gate - Last ) transistors that achieved 200-1000x reduction in gate leakage relative to leading-edge logic devices in the industry

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