Gate First
Gate First news and technical articles from Solid State Technology Magazine. Search Gate First latest and archived news and articles
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Integrating high-k /metal gates: gate -first or gate-last?
… proposed, traditionally referred to as gate first and gate last. What are the integration ..... main integration options remain: gate - first (often referred to as MIPS, metal ..... thickness (2nm or 10nm). The gate - first approach was initially developed by …
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Integrating high-k /metal gates: gate -first or gate-last?
… proposed, traditionally referred to as gate first and gate last. What are the integration ..... main integration options remain: gate - first (often referred to as MIPS, metal ..... thickness (2nm or 10nm). The gate - first approach was initially developed by …
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Analyst's take: Why the gate first -last debate isn't over
… declared that they will switch from a gate - first approach to a gate-last approach ..... at the ≤32nm node: a camp of gate - first proponents, led by IBM and CPA ..... ways to deal with drawbacks. " Gate first is simpler and lower cost as the …
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Gate -first says Globalfoundries
… s rationale for selecting the gate - first approach to HK+MG processing ..... or Play Now Kepler said that the gate - first approach enables the overall V t tuning ..... requirements. Kepler also said that gate - first offers repeatable LVT and SLVT options …
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IBM: We've made 32nm high- k "gate first " SRAMs
… using a high- k /metal gate ( gate - first ) process in SRAM chips, which ..... foundry CMOS technology high- k " gate - first approach, in 32nm ultradense SRAM ..... voltages. Demonstrating the high- k gate - first approach in a manufacturing environment …
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Under the hood of IBM's HK+MG gate -first processing
… development, discusses details of the company's new high- k /metal-gate (HK+MG) transistor technology, a " gate first " approach that keeps the same processing sequence used by traditional SiON gates, allowing for both technologies to …
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IEDM 2009: HKMG gate -first vs gate-last options
… device generations. He compared gate - first and gate-last advantages and disadvantages ..... Companies that have reported on a gate - first process include IBM, UMC, Panasonic ..... SiGe channel process would allow gate - first process strategy, and would require …
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Gate structure and 3D stacking winners will determine semiconductor industry direction
… question is whether it will be "metal gate first " or "metal gate last." IBM is leading the metal gate first method and Intel is pushing metal ..... move to the 20/22nm node, the gate - first /gate-last debate winner will …
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To FUSI or not FUSI? That's the question
… and Part 2 ). According to Raj Jammy, director of front end processes at SEMATECH, the consortia has settled on a gate first /high- k metal-inserted poly stack (MIPS) electrode approach instead of FUSI or replacement gates. "We've been …
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Rockchip launches new tablet SoCs on GLOBALFOUNDRIES’ 28nm HKMG process technology
… our production-proven HKMG process.” GLOBALFOUNDRIES’ 28nm-SLP technology is based on GLOBALFOUNDRIES’ “ Gate First ” approach to HKMG, which has been in volume production for more than two years.
