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Fully Depleted

Fully Depleted news and technical articles from Solid State Technology Magazine. Search Fully Depleted latest and archived news and articles

  1. Soitec's fully depleted (FD) semiconductor product roadmap

    Article

    Tue, 17 Apr 2012

    materials supplier, released its fully depleted (FD) product roadmap, comprising ..... line enables a planar approach to fully depleted silicon transistors as early ..... it possible to achieve planar fully depleted transistors with a silicon thickness

  2. The era of fully -depleted devices

    Article

    Tue, 1 Nov 2011

    The technical superiority of fully - depleted transistors is well understood ..... the IC industry and academia. Fully - depleted devices enable the IC industry ..... scaling race. The fabrication of fully - depleted transistors can be achieved through

  1. Soitec's extreme SOI: Scalable below 14nm

    Article

    Wed, 10 Aug 2011

    August 10, 2011 - Post-22nm and below, the industry is going to fully depleted structures, either FinFETs or fully - depleted planar SOI (FDSOI), explained Steve Longoria, SVP, global strategic business development

  2. SEMICON West preview: Conference keynotes and "Extreme Electronics"

    Article

    Fri, 18 May 2012

    Solar. SEMI will also present an Executive Summit moderated by Jonathan Davis, SEMI, on the 11th. TechXPOT sessions Fully depleted transistor architectures on Tuesday, next-generation lithography on Wednesday, and the International Technology

  3. ST-Ericsson adopts FDSOI from Soitec

    Article

    Mon, 12 Mar 2012

    semiconductor company, selected planar fully depleted silicon on insulator (FD-SOI ..... critical characteristics of the fully depleted transistor: an extremely thin ..... performance of processors built on fully depleted wafers can experience up to 60

  4. SEMICON West heralds 22nm, EUVL, 450mm, mobile electronics speakers

    Article

    Mon, 2 Apr 2012

    SEMI plans 3 TechXPOT sessions at SEMICON West: Fully depleted transistor architectures on Tuesday, next-generation ..... Thusday. Learn about advances -- and challenges -- in fully depleted devices and III-V channel materials for new transistors

  5. Evolution or revolution: the path for metrology beyond the 22nm node

    Article

    Thu, 1 Mar 2012

    to address the measurement challenges of next generation devices. References Doyle, B. et al., "Tri-Gate Fully - Depleted CMOS Transistors: Fabrication, Design and Layout," Symposium on VLSl Technology Digest of Technical Papers

  6. Common Technology Platform Forum looks to the future

    Article

    Sun, 1 Apr 2012

    the 22/20nm work is being done in East Fishkill; 14/10nm at Albany; and 7nm & beyond at Yorktown Research. Fully depleted device structures are the recurring theme going forward. CNT devices provide advantages over FinFETs in terms an

  7. Samsung, IBM and GlobalFoundries look to the future: A report from the Common Platform Technology Forum

    Article

    Thu, 15 Mar 2012

    the 22/20nm work is being done in East Fishkill; 14/10nm at Albany; and 7nm & beyond at Yorktown Research. Fully depleted device structures are the recurring theme going forward. CNT devices provide advantages over FinFETs in terms an

  8. 3D integration key to 22nm semiconductor devices

    Article

    Mon, 2 Jan 2012

    node, we also expect to see mobile, low-power and system-on-chip (SoC) applications implementing planar fully depleted silicon-on-insulator (FD SOI)-based transistors. For many devices, implementation of the 3D system architecture

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