Field Effect Transistor
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Direct chip bonding, all-SiC design increase power density in Mitsubishi Electric inverter
… conventional high-resistance aluminum lead wires. The module’s chips include a SiC metal oxide semiconductor field effect transistor (MOSFET) and SiC schottky barrier diode (SBD). It is rated at 1,200V/300A. The power semiconductors …
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Conference Report: MRS Spring 2012, Day 4
… Charles Lieber at Harvard University took us on a tour of the frontier between biology and nanotechnology. The field effect transistor (FET) structure is readily adaptable to monitoring basic biological signals. Nanowire FETs can bring us into …
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Graphene FET enables high-frequency mixer circuits
January 3, 2011 -- Chalmers University of Technology researchers created a novel subharmonic graphene field - effect transistor (FET) mixer at microwave frequencies, which could serve as the basis of more compact circuit designer at …
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Cornell, SRC develop RF MEMS technologies
… in this research is a single-crystal silicon micro-mechanical resonator acoustically coupled to junction field effect transistor (JFET) built on a SOI substrate. The high quality factor and low loss can be attributed to the use of single …
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Transistor uses protons analogously to electrons for bio-compatibility
September 22, 2011 -- University of Washington materials scientists are working on a field - effect transistor (FET) that uses protons to communicate, rather than electrons. Translating an electronic signal to an ionic one, or vice versa …
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Power management semiconductors grow after a rocky Q4 2011
… the main growth area for these sectors, followed by low-voltage and high-voltage metal-oxide-semiconductor field - effect transistors (LV and HV MOSFETs). IHS (NYSE: IHS) is a leading source of information, insight and analytics in critical areas …
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Graphene grown on 300mm wafers with AIXTRON tool in Japan
… of layers. The work will go into creating low-voltage-operation complementary metal oxide semiconductor (CMOS) field - effect transistors (FETs), in which the power supply voltage will be less than 0.3V. Dr. Shintaro Sato, AIST, presented the growth …
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IEDM 2011: Three 5nm FETs battle in ultimate device scaling
… Paper #11.2, "Ultimate Device Scaling: Intrinsic Performance Comparisons of Carbon-Based, InGaAs and Si Field - Effect Transistors for 5-nm Gate Length"] Next slide: Straining the limits of CMOS with Ge, III/V Previous slide: Hollow copper …
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IEDM 2011: InGaAs trigate MOSFET
… 1, "Electrostatics Improvements in 3-D Tri-Gate Over Ultra-Thin Body Planar InGaAs Quantum Well Field Effect Transistors with High-K Gate Dielectric and Scaled Gate-to-Drain/Gate-to-Source Separation"] Next slide …
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GaN-on-Si advances from Translucent and Bridgelux
… for gallium nitride (GaN) device growth. The main target applications include light-emitting diodes (LED) and field - effect transistors (FET). The III-N semiconductors family uses scalable GaN-on-Si wafers: crystalline REO layers provide stress …
