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Fd Soi

Fd Soi news and technical articles from Solid State Technology Magazine. Search Fd Soi latest and archived news and articles

  1. ST-Ericsson adopts FDSOI from Soitec

    Article

    Mon, 12 Mar 2012

    silicon on insulator ( FD - SOI ) technology from Soitec ..... buried oxide (BOx) layer. FDSOI offers higher performance ..... with STMicroelectronics on FD - SOI have demonstrated that ..... collaborated for several years on FDSOI , demonstrating its benefits

  2. FDSOI improves CMOS scalability, speed, power consumption at 11nm

    Article

    Tue, 12 Jul 2011

    of fully depleted silicon on insulator ( FDSOI ) technology to improve CMOS scalability ..... demonstrated that switching from bulk 28nm to 20nm FDSOI technology can improve circuit speed by ..... technologies, and highlight the benefits of this FDSOI technology. Since this technology does

  1. Inside Leti: FDSOI , 3D packaging, Si photonics work

    Article

    Fri, 12 Aug 2011

    on fully depleted silicon on insulator ( FDSOI ), 3D packaging technologies, and integrated ..... Malier says performance data at 22nm shows FDSOI is comparable to FinFET with respect to the speed gain and low power performance. FDSOI technology is also easily manufactured

  2. Trigate transistors vs FDSOI

    Article

    Thu, 14 Jul 2011

    Intel's presentations on strain engineering and lithography masks for trigate transistors , and the industry split between FDSOI and trigates. He also covers 28nm and 450mm news (both are moving into real world semiconductor manufacturing). Read James

  3. Technical forecast: 22nm devices

    Article

    Sun, 1 Jan 2012

    mobile, low-power and system-on-chip (SoC) applications implementing planar fully depleted silicon-on-insulator ( FD SOI )-based transistors. Mask-wafer double simulation: a new requirement Aki Fujimura , CEO, D2S, Inc. At the 20nm process

  4. 3D integration key to 22nm semiconductor devices

    Article

    Mon, 2 Jan 2012

    mobile, low-power and system-on-chip (SoC) applications implementing planar fully depleted silicon-on-insulator ( FD SOI )-based transistors. For many devices, implementation of the 3D system architecture alone is more attractive and cost effective

  5. Integration and 3D-ICs driving developments in wafer bonding

    Print

    Sat, 1 Oct 2011

    Acknowledgments Gemini, SmartView are registered trademarks of EV Group. References 1. IC Knowledge LLC news release, " FD - SOI determined to be more economical than planar bulk silicon CMOS processing," Georgetown, Mass., July 12, 2011. 2. G

  6. The era of fully-depleted devices

    Article

    Tue, 1 Nov 2011

    Mazuré , Soitec, Bernin, France Planar FDSOI devices can be used to improve the short ..... ultra-thin silicon-on-insulator ( FDSOI ) while the FinFETs are built on ultra ..... Device architecture options: a) planar FDSOI , b) FinFET SOI, and c) FinFET bulk

  7. Soitec's extreme SOI: Scalable below 14nm

    Article

    Wed, 10 Aug 2011

    FinFETs or fully-depleted planar SOI ( FDSOI ), explained Steve Longoria, SVP, global ..... thin buried oxide that is used for planar FDSOI . According to an IC Knowledge paper cited ..... specifications and the volume manufacturing with FDSOI or extreme SOI going forward. "Research

  8. Day 1: Intersolar wanderings, SEMICON West symposium

    Article

    Wed, 13 Jul 2011

    high performance at low V DD , which is the focus of Leti's FDSOI program (fully-depleted silicon on insulator). These devices ..... undoped channel. Migration from 28nm bulk transistors to 20nm FDSOI can enable a 50% power reduction at constant speed, or a 60

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