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continue to shrink, anisotropic dielectric etching faces a daunting list of challenges that ..... uniformity, aspect-ratio dependent etching , and etch stop. Data in this article ..... F 8 - is helping to enable anisotropic etching of dielectric materials. The transition
current generation of laser microchemical etching systems removes bulk silicon with several ..... The mechanism for laser microchemical etching of silicon. A visible-wavelength laser ..... Click here to enlarge image Laser induced etching of silicon can be accomplished using a
New York overview Directional plasma etching of low dielectric constant materials presents ..... constant material applications, and plasma etching of porous silica exhibits important differences ..... dielectric by lithographic and plasma etching techniques. The trenches are subsequently
front-end processing, wet chemical etching of under-bump metallurgy in the presence ..... solvent resist stripping, and metal etching . These processes, as applied to solder ..... territory. We have been focusing on wet etching of metal layers for the solder bump process
Progress has been made, though, in etching materials. Results with a variety of ..... Critical plasma etch processes The plasma etching and resist/polymer strip steps are among ..... significantly less resistant to plasma etching than those exposed at 248nm; and retain
Selective etching of silicon oxides relative to silicon ..... techniques, including photolithography and dry etching . Emerging innovative MEMS devices, however ..... depths are required. MEMS-specific etching Unlike silicon, undoped silicon dioxide
processes targeted specifically for the etching of nanoimprinting stamps, de-scumming of the NIL polymer, and nanoscale etching with the NIL polymer mask. The work ..... trenching ( see image below ). " Etching of the stamp used in the imprint process
configuration of the companies PE-200 plasma etching /cleaning system. Designed for anisotropic etching of nitrides, oxides, and polyimide, the ..... increments. In addition to anisotropic etching capabilities, another complete electrode assembly
Load-locked etching system The RIE-200 iP load-locked etching system uses the latest inductively coupled plasma technology to perform high-speed, 0.25-?m etching of the thin films used in ULSI processing. The system
creates plasma process technologies, have released a suite of etching tools specific to MEMS, combining STS and XACTIX products ..... etch systems enable unconventional processes, "such as etching after package insertion and wire-bonding," says David Springer