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the traditional diaphragm pumps (D1 and D2) for an etching process . The D1 has low pulsation intensity and high frequency ..... operated in swing mode is preferred for single wafer etching process as it shows high etch rate with lower etch rate uniformity
consider Si etching performed using Ar/HBr plasmas. TEL has experimentally determined etch profiles for the Ar/HBr etching process at a range of pressures [3]. Comparing the shapes of the etch profiles obtained with the lowest pressure (40mTorr
applied using plasma etching, Brenner said. Controlling the specific atoms used in the plasma, or conducting the etching process in an environment containing specific atoms, could drive those atoms into the edges where they would serve as dopants
packaging for MEMS; Plasma etch challenges (profile control, feature level uniformity, plasma microdamage); a dry etching process for phase-change memory; selective etch processes for magnetic materials (Ni, Co, Ta) High- k dielectrics
have multi-gap or multi-nano-gap structures. Present technology requires the use of a sacrificial layer and an etching process which limits the minimum size of the gap because it is more difficult to etch thinner sacrificial layer materials