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Epitaxy

Epitaxy news and technical articles from Solid State Technology Magazine. Search Epitaxy latest and archived news and articles

  1. Measurement of carrier lifetime: Monitoring epitaxy quality

    Magazine Articles

    Thu, 1 Jun 2000

    processes of generation-recombination in the epitaxy layers on silicon, also accounting for ..... new, in-line monitoring technique for epitaxy quality via lifetime measurement. This ..... our work, we studied 10mm of n-doped epitaxy on an n-substrate, matching our current

  2. ASM debuts 300mm epitaxy and PEALD/PECVD tools for HV transistor fab

    Online Articles

    Wed, 11 Jul 2012

    Amsterdam:ASM), launched advanced deposition systems for epitaxy , plasma-enhanced atomic layer deposition (PEALD), and ..... wafer Epi process tool that can be configured with up to four epitaxy reactor modules. The Intrepid XP deposits advanced strained

  1. Translucent demos LED growth via one-step epitaxy with rare earth oxides on Si

    Online Articles

    Mon, 18 Jul 2011

    one-step light emitting diode (LED) epitaxy on large-diameter wafers. Translucent ..... layer that can support further nitride epitaxy for LED structure growth. The GaN-on ..... material was grown using molecular beam epitaxy (MBE) reactors at Translucent’s

  2. Dow Corning orders AIXTRON epitaxy reactors for power electronics fab

    Online Articles

    Thu, 10 May 2012

    planetary reactor platforms to its silicon carbide (SiC) epitaxy capacity for next-generation power electronics . The AIXTRON ..... electronics group offers high-quality silicon carbide wafers and epitaxy services, using proprietary crystal growth methods and precision

  3. imec studies molecular beam epitaxy for advanced CMOS on high-mobility compound semiconductors

    Online Articles

    Tue, 13 Mar 2012

    March 13, 2012 -- Molecular beam epitaxy equipment supplier Riber will work with research organization imec on epitaxy process technologies for next-generation III-V semiconductor CMOS devices. Within imec’s Germanium and III-V devices

  4. TEL silicon carbide (SiC) epitaxy tool ordered by Infineon

    Online Articles

    Fri, 16 Mar 2012

    March 16, 2012 -- Infineon Technologies (Germany) ordered the Probus-SiC silicon carbide (SiC) epitaxy film growth tool from Tokyo Electron Limited (TEL). It will be used to mass produce advanced SiC power devices . The Probus

  5. GlobiTech Launches CMOS Epitaxy Foundry

    Online Articles

    Fri, 25 Feb 2000

    SHERMAN, TX The notion of sharing risk is giving epitaxy specialists like start-up GlobiTech's dedicated CMOS epitaxial foundry a viable niche in the chip making business. While semiconductor

  6. ASM, IHP cooperate on SiGe:C epitaxy technology

    Online Articles

    Tue, 26 Dec 2000

    Microelectronics, a German development center for semiconductor technology, to commercialize silicon germanium carbon (SiGe:C) epitaxy technology, a process initially developed by IHP. The process allows extremely high-speed SiGe:C heterojunction bipolar

  7. MOCVD and MBE epitaxy trends for compound semiconductors

    Online Articles

    Fri, 20 Apr 2012

    deposition (MOCVD) and molecular beam epitaxy (MBE) represent essentially 100% of ..... LED GaN - MOCVD). SOURCE: III-V Epitaxy Equipment & Applications Market report, April ..... Epistar, Epiworks First Nano, Formosa Epitaxy , Freiberger, Fujiepi, Furukawa, GCS

  8. Precursors for group IV epitaxy for micro/opto-electronic applications

    Magazine Articles

    Wed, 1 Apr 2009

    creating a uniaxial tensile stressor via epitaxy in the source/drain region of transistors ..... the adjacent channel region. However, epitaxy of Si:C is much more challenging than SiGe ..... precursor for low temperature selective epitaxy of silicon based films. Epitaxial processes for

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