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Epitaxy

Epitaxy news and technical articles from Solid State Technology Magazine. Search Epitaxy latest and archived news and articles

  1. Dow Corning orders AIXTRON epitaxy reactors for power electronics fab

    Article

    Thu, 10 May 2012

    planetary reactor platforms to its silicon carbide (SiC) epitaxy capacity for next-generation power electronics . The AIXTRON ..... electronics group offers high-quality silicon carbide wafers and epitaxy services, using proprietary crystal growth methods and precision

  2. imec studies molecular beam epitaxy for advanced CMOS on high-mobility compound semiconductors

    Article

    Tue, 13 Mar 2012

    March 13, 2012 -- Molecular beam epitaxy equipment supplier Riber will work with research organization imec on epitaxy process technologies for next-generation III-V semiconductor CMOS devices. Within imec’s Germanium and III-V devices

  1. TEL silicon carbide (SiC) epitaxy tool ordered by Infineon

    Article

    Fri, 16 Mar 2012

    March 16, 2012 -- Infineon Technologies (Germany) ordered the Probus-SiC silicon carbide (SiC) epitaxy film growth tool from Tokyo Electron Limited (TEL). It will be used to mass produce advanced SiC power devices . The Probus

  2. Translucent demos LED growth via one-step epitaxy with rare earth oxides on Si

    Article

    Mon, 18 Jul 2011

    one-step light emitting diode (LED) epitaxy on large-diameter wafers. Translucent ..... layer that can support further nitride epitaxy for LED structure growth. The GaN-on ..... material was grown using molecular beam epitaxy (MBE) reactors at Translucent’s

  3. MOCVD and MBE epitaxy trends for compound semiconductors

    Article

    Fri, 20 Apr 2012

    deposition (MOCVD) and molecular beam epitaxy (MBE) represent essentially 100% of ..... Epistar, Epiworks First Nano, Formosa Epitaxy , Freiberger, Fujiepi, Furukawa, GCS ..... Développement’s report “III-V Epitaxy Equipment & Applications Market,” covers

  4. AIXTRON installs high-capacity epitaxy system at Epistar for LED fab

    Article

    Wed, 29 Feb 2012

    Epistar installed its first AIXTRON SE CRIUS II-XL system in a 19 x 4" wafer configuration to mass produce ultra-high-brightness (UHB) blue and white LEDs.

  5. ASM covers FinFET precursor needs from epitaxy to HKMG ALD

    Article

    Fri, 22 Jul 2011

    ASM International's Bob Hollands discusses the challenges of making FinFET structures using both epitaxial and high-k/metal gate (HKMG) atomic layer deposition (ALD) processes.

  6. AIXTRON wins repeat MOCVD order from LED maker

    Article

    Mon, 7 May 2012

    May 7, 2012 -- AIXTRON SE’s long-time customer Formosa Epitaxy Inc. (FOREPI) ordered several MOCVD systems: 4 CRIUS II ..... performance, throughput and yield for the purchase decision. The epitaxy tools FOREPI chose also offer “seamless process scale

  7. Nocilis Materials launches SiGe foundry

    Article

    Thu, 5 Jan 2012

    service globally. Nocilis Materials AB provides epitaxy service of advanced Si-Ge-Sn-C alloys ..... structures based on group IV materials. Its epitaxy services are based on RPCVD and epitaxy layers are provided on 4”, 6” and 8” substrates

  8. Nitrogen-rich indium nitride wafers debut from Meaglow

    Article

    Wed, 7 Mar 2012

    March 7, 2012 - Marketwire -- Meaglow Ltd., MOCVD and epitaxy supplier, launched a range of nitrogen-rich indium nitride ..... adoption of the material. Meaglow Ltd. produces a range of epitaxy equipment (migration enhanced afterglow), MBE & MOCVD accessories

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