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Diffusion Barriers

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  1. Cu interconnects with Ru diffusion barriers

    Magazine Articles

    Sat, 1 Oct 2005

    four-point electroprobe. Traditionally, TaN/Ta or TiN/Ti bilayer barrier films have been used for copper diffusion barriers - the main reason is that metallic Ta does not bond well to the nonmetallic Si/SiO 2 substrate and Cu does not

  2. Orgin of "stuffed diffusion barriers " (revised)

    Magazine Articles

    Mon, 1 Mar 1999

    Origin of "stuffed diffusion barriers " (revised) I must emphasize here that my letter in the August issue (Letters, p. 18) was in direct response to the paper

  1. Novellus-reduces-RC-delay-for-sub-28nm-dielectric-film-processing

    Online Articles

    Tue, 15 Mar 2011

    post-processing of dielectric films, such as diffusion barriers . The innovative interface engineering approach ..... different frequencies. "The interface between diffusion barriers , IMD layers and copper interconnects is critical

  2. Conference Report: MRS Spring 2012, Day 3

    Online Articles

    Thu, 12 Apr 2012

    energy storage and conversion, Mn capping layers and diffusion barriers , hard masks for Cu interconnects, nanogenerators ..... Gordon of Harvard U spoke on Mn capping layers and diffusion barriers in copper interconnects for TSV and on-chip vias

  3. 2013: Multiple inflection points provide opportunity to extend benefits of Moore’s Law

    Online Articles

    Wed, 2 Jan 2013

    have high-aspect-ratio features that must be filled without voids with thin, conformal, low-resistivity diffusion barriers using atomic-layer deposition. 3D NAND is formed by first depositing alternating layers of insulators and conductors

  4. 2013 technology forecast: Unprecedented challenges ahead

    Magazine Articles

    Tue, 1 Jan 2013

    have high-aspect-ratio features that must be filled without voids with thin, conformal, low-resistivity diffusion barriers using atomic-layer deposition. Paul Lindner, Executive Technology Director, EV Group The Internet of Things

  5. Conference report: IITC closes with talks from EUV to TSV

    Online Articles

    Thu, 7 Jun 2012

    necessary. Figure 10. Proposed miniaturized implantable packaging. 1) All chips are individually encapsulated by diffusion barriers using a wafer level process. 2) Biocompatible chip interconnections and embedding of multiple chips by a flexible

  6. Copper resistivity fixable for 45 nm node, but long-term issues remain, SEMATECH and Novellus workshop reveals

    Online Articles

    Thu, 7 Jul 2005

    Minimize the volume that diffusion barriers occupy by making them ultra ..... to see more use of ultrathin diffusion barriers deposited by ion induced atomic ..... minimizing volume occupied by diffusion barriers and enlarging copper grains

  7. Product News

    Magazine Articles

    Wed, 1 Jun 2011

    developed for advanced technology nodes that require pre- and/or post-processing of dielectric films, such as diffusion barriers . The system reduces interconnect RC delay without introducing new materials into the back-end-of line (BEOL

  8. Wafer bonding enables better LEDs with right process and materials

    Online Articles

    Mon, 21 May 2012

    layers such as platinum, aluminum, and gold, or combinations of these materials, are used. Next, adhesion and diffusion barriers have to be chosen to contain the diffusive metals from the injection contacts or mirror layer of the LED structure

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