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Deep Reactive Ion Etching

Deep Reactive Ion Etching news and technical articles from Solid State Technology Magazine. Search Deep Reactive Ion Etching latest and archived news and articles

  1. CEA Leti adds SPTS on 3D IC line with 300mm PVD order

    Online Articles

    Wed, 9 Feb 2011

    said Dr. Laurent Malier, CEO of CEA-Leti, adding that SPTS has integration expertise in all three areas of deep reactive ion - etching (DRIE), dielectric deposition, and metal seed deposition. SPTS participated at Leti’s Inauguration

  2. STATS ChipPAC readies R&D site in Singapore

    Online Articles

    Mon, 14 May 2007

    specialize in wafer-level processing," with an equipment set for photolithography, plasma etching and deep reactive ion etching (DRIE), wafer thinning, and wafer bonding, the company said in a statement. Operations at the new Singapore

  3. Tegal+AMMS eyes growth in 3D packaging, MEMS

    Online Articles

    Mon, 8 Sep 2008

    Tegal will particularly target "the rapidly expanding markets for 3D wafer-level packaging applications." Deep reactive - ion etching (DRIE) is a highly anisotropic etch process used to create deep, steep-sided holes and trenches in wafers

  4. Technology news

    Magazine Articles

    Mon, 1 Oct 2007

    sector research and advanced engineering at Robert Bosch GmbH, and inventor of the widely used Bosch process for deep reactive ion etching (DRIE). Faster volume production will not only bring down the costs of MEMS devices to expand their use in

  5. Submicron micromachining technology for liquid phase chromatography separation

    Magazine Articles

    Thu, 1 May 2008

    enabling patterning of submicron structures. The Si oxide is patterned and used as a hard mask for the next deep reactive ion etching (DRIE) step, which defines the pillars with an aspect ratio up to ~25 and the separation channel ( Fig

  6. Advanced Packaging Awards Entry Showcase

    Magazine Articles

    Sat, 1 Jul 2006

    maintaining high etch rates. The system is fully compatible with any of STS’ modular platform configurations. A deep reactive ion etching (DRIE) advanced silicon etch (ASE) process enables vias with near-vertical sidewalls to provide electrical

  7. Two different approaches to integrated MEMS

    Online Articles

    Wed, 7 May 2008

    and bond pads for the MEMS electrodes. The MEMS structure itself is then patterned and etched using a DRIE ( deep reactive ion etching ) process which does not etch the oxide remaining on the edges and inside of the lid. Separately, the ASIC die

  8. Bosch: Deep etch tools on target for 100µm/min throughput in 2-3 years

    Online Articles

    Mon, 1 Oct 2007

    sector research and advanced engineering at Robert Bosch GmbH, and inventor of the widely used Bosch process for deep reactive ion etching . These faster volume production speeds will not only bring down the costs of MEMS devices to expand their use

  9. Semicon West 2005 Product Panorama

    Magazine Articles

    Fri, 1 Jul 2005

    BenchMark inductive coupled plasma (ICP) etcher is a high-performance plasma-processing system capable of deep reactive - ion etching (DRIE) and low-temperature Si 3 N 4 and SiO 2 deposition. The system accommodates a variety of substrate

  10. DALSA Semiconductor to License Alchimer's eG ViaCoat Technology

    Online Articles

    Mon, 15 Dec 2008

    diameter is narrower at the surface of the substrate than at the bottom,a nd is characteristic of faster Bosch deep reactive ion etching (DRIE) processes. By demonstrating consistent step coverage on reentrant structures, eG ViaCoat reportedly

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