Copper Interconnects
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Copper interconnects : Process integration of iALD TaN
Novellus authors investigated the film characteristics and process integration of TaN produced using iALD. High-density TaN with low resistivity and excellent conformality is demonstrated. With the adoption of Cu metallization, metal barriers such as TaN are needed to enhance the adhesion of metal
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Conference Report: MRS Spring 2012, Day 3
… on Mn capping layers and diffusion barriers in copper interconnects for TSV and on-chip vias, including a unique void ..... provided some insights into the ideal hard mask for copper interconnects at 20nm and below. Carbon films are deposited …
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The move to 450mm: Europe's perspective
… the ~3-4% /year exponentially increasing costs due to technology cycle upgrades and insertions, e.g., copper interconnects replacing aluminum. Although not necessarily desired, the ITRS has been anticipating a slowdown in the rate of …
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Quantum dot laser grown on silicon substrate, suits telecom
… interconnects for use with silicon electronics -- will enable electronics to handle larger quanitites of data than current copper interconnects . However, silicon has proven to have a difficult atomic structure for light sources. Semiconductor lasers provide …
