Advanced Transistors
Advanced Transistors news and technical articles from Solid State Technology Magazine. Search Advanced Transistors latest and archived news and articles
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Re-enabling Moore’s Law with re-engineered gate stacks
Advanced transistors : Last of three parts After years of struggling to delay the inevitable, it is clear that a replacement for the traditional oxide …
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GaN use growing in power semiconductors
… than the pure Si devices. These properties allow the GaN discretes like Schottky diodes, MOSFETs, and the other advanced transistors to operate at much higher voltage levels, which are difficult for the counterpart Si devices. GaN power semiconductors …
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Global forecast and analysis of GaN semiconductor market released
… than the pure Si devices. These properties allow the GaN discretes like Schottky diodes, MOSFETs, and the other advanced transistors to operate at much higher voltage levels, which are difficult for the counterpart Si devices. GaN power semiconductors …
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2013: Facing unprecedented precision engineering challenges
… transition to 20-nanometer process technology node as a significant milestone. 20-nanometer is all about building advanced transistors that can deliver low leakage, low power and high performance in a smaller footprint. To achieve this combination …
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2013 technology forecast: Unprecedented challenges ahead
… the foundry transition to 20nm process technology node as a significant milestone. 20nm is all about building advanced transistors that can deliver low leakage, low power and high performance in a smaller footprint. To achieve this combination …
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SiC's advantages over silicon push more SiC semiconductors over 10 years
… power handline and smaller form factors. Discretes based on SiC include Schottky diodes, MOSFETs, and the other advanced transistors , as well as opto-semiconductors ( LEDs , laser diodes), and high-temperature rad-hard semis. Over the …
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Imec at SEMICON West: Interview with Luc Van den hove
… intermixing in aggressively-scaled metal gates, imec’s research addresses an important source of variability in advanced transistors . Imec has also invested significant effort in the development of 3D FinFET devices and high-k metal gate over …
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DARPA funds GaN-on-diamond device development at Raytheon
… Nitride (TEGaN). The diamond packaging boosts GaN power handling capability by at least 3x, Raytheon reports. Advanced transistors and monolithic microwave integrated circuits (MMICs) can use TEGaN to reduce thermal resistance, multiplying GaN …
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Applied heats up RTP for 2Xnm with backside wafer heating
… But thermal budgets are getting tougher as technologies scale: chipmakers use RTP/anneal at multiple steps in advanced transistors : source/drain, silicide, interlayer dielectric and high- k densification, and now with new FinFET architectures …
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Conductor etch system will drive down cost-per-bit, says AMAT
… 1: Cost-per-bit reduction requirements for memory. (Sources: Gartner/Applied Materials) New steps in advanced transistors , double-patterning, and advanced packaging are driving growth in the conductor etch market (~$1.6B market …
