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3d Transistor

3d Transistor news and technical articles from Solid State Technology Magazine. Search 3d Transistor latest and archived news and articles

  1. Quantum transistor promises easier fab than Intel's 3D transistor

    Article

    Tue, 14 Jun 2011

    transistors, such as Intel Corporation's "trigate" 22nm node 3D transistor . Avto uses a "unique surface geometry," fabricated at ..... less heat. Gate capacitance is lower than that of Intel's 3D transistor and similar semiconductor designs, Avto states, owing to

  2. Intel’s first 22nm trigate transistor products debut

    Article

    Tue, 24 Apr 2012

    James in Intel 22nm trigate transistor exposed Intel’s 3D transistor technology is combined with architectural enhancements to ..... tock” model, wherein a new manufacturing process ( 3D transistors ) was introduced in 1 year (“tick”), and the architecture

  1. Intel (INTC) plans high capex and fast node shrinks, expects chipmaker consolidation

    Article

    Fri, 11 May 2012

    sustainable advantages in manufacturing, its product roadmaps, process leadership, technology leadership (high- k , 3D transistors ), and scale, FBR said. Average capital costs per silicon square inch keep increasing, said Smith, but costs per transistor

  2. Intel’s Q1 2012 earnings: Key takeaways

    Article

    Thu, 19 Apr 2012

    sustainable advantages in manufacturing, its product roadmaps, process leadership, technology leadership (high- k , 3D transistors ), and scale. However, tablets and smartphones are tempering growth in Intel's core business, with some WoA risks

  3. Plasma etch challenges for FinFET transistors

    Article

    Tue, 10 Apr 2012

    High-precision etching is more important than ever, and new etch techniques may be needed to achieve the requirements of 3D transistor architectures. While there is still work to be done, bias pulsing offers a viable approach to achieve directional etching

  4. Evolution or revolution: the path for metrology beyond the 22nm node

    Article

    Thu, 1 Mar 2012

    nodes. The 22nm node marks the beginning of a major transition from conventional scaling-driven planar devices to complex 3D transistor architectures, redefining future needs for lithographic, defect, and films metrology solutions for high volume manufacturing

  5. Common Technology Platform Forum looks to the future

    Article

    Sun, 1 Apr 2012

    development that is in the pipeline beyond traditional CMOS scaling. We are presently in the 3D decade, both in terms of 3D transistor design and 3D packaging integration. Next will be the decade of nanotechnology materials, in which the critical device

  6. Samsung, IBM and GlobalFoundries look to the future: A report from the Common Platform Technology Forum

    Article

    Thu, 15 Mar 2012

    development that is in the pipeline beyond traditional CMOS scaling. We are presently in the 3D decade, both in terms of 3D transistor design and 3D packaging integration. Next will be the decade of nanotechnology materials, in which the critical device dimensions

  7. Applied Materials analyst day preview

    Article

    Mon, 26 Mar 2012

    opportunities from the other adjacent markets during the Varian break-out. Deposition intensifying thanks to 3D structures As 3D transistors become more popular and as back-end semiconductor packaging turns to more wafer level packaging (WLP) of 3D multi-die

  8. Semiconductor metrology beyond 22nm: 3D memory metrology

    Article

    Thu, 16 Feb 2012

    semiconductor node marks the beginning of a major transition from conventional scaling-driven planar devices to complex 3D transistor architectures, redefining future needs for lithographic, defect, and films metrology solutions for high-volume manufacturing

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