Table of ContentsColumnsEditorialBeyond Silicon: What's Next?Peter Singer, Editor-In-Chief
Industry ForumTime to go labless for new product ramp-upThe semiconductor industry is ready to see a new foundry lik model emerge, supporting the transition to "Labless" manufacturing just as the development of foundries fostered the emergence of fabless semiconductor companies, Michel Villemain, Presto Engineering Inc., San Jose, CA USA
DepartmentsTech NewsFeaturesION ImplantationComparative study of advanced boron-based ULE dopingB2H6 PLAD and B18H22 molecular implants demonstrate the best Rs-xj and abruptness characteristics, while beam-line BF2 implants as well as cluster B implants show worse Rs-xj characteristics.Shu Qin, Y. Jeff Hu, Allen McTeer, Micron Technology, Inc., Boise, ID USA
III-V MOSFETsIII-V MOSFETs: beyond silicon technologyResults so far are highly encouraging for III-V MOSFETs to be used for ultra high speed, and ultra low power applications. Richard J.W. Hill, Jeff Huang, Joel Barnett, Paul Kirsch, Raj Jammy, SEMATECH, Austin TX USA
HIGH-K/METAL GATEIntegrating high-k /metal gates: gate-first or gate-last?For low power applications, gate-first is arguably the most appropriate choice, but for high performance applications, complex solutions (e.g., SiGe channel for pMOS) need to be considered in order to meet the performance requirements with a gate-first process. |
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