The move to the 2Xnm NAND flash node gives Intel and Micron a big step ahead of competitors in terms of cost and pricing, an advantage they will likely ride out as profit instead of squeezing prices further, according to an analyst.
Fabless giant Qualcomm has made two deals to reserve leading-edge semiconductor manufacturing capacity: one with longtime partner TSMC, and the other with upstart GlobalFoundries.
Scientists at the US Defense Advanced Research Projects Agency (DARPA) are asking industry to come up with new ways of designing integrated circuits for affordable, low-volume nanofabrication for US Department of Defense (DOD) applications.
ASM International NV has licensed key processes and material IP to the Air Liquide Group, related to deposition of advanced ultra-high-k insulator films such as yttrium-doped zirconia, STO, and BST, used most recently as gate insulator material in logic manufacturing.
NEC Electronics disclosed two areas of work at the International Electron Devices Meeting (IEDM): a low-resistance copper interconnects with partially thickened local structure (PTL) to address resisitivity increases (and thus RF performance) in analog conductors, and high-threshold voltage-control gallium nitride (GaN) power transistors on a silicon substrate.
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Dual Channel Pulse Testing Simplifies RF Transistor Characterization
Device engineers and test managers are under tremendous pressure to make sure products get to market quickly and perform reliably. This is especially true of RF ... Sponsored By:
Keithley Instruments
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High Precision Ion Beam Milling with Time of Flight Compensation
Advanced circuit editing (CE) becomes more and more difficult as semiconductor structures shrink. Time of Flight (ToF) compensation noticeably extends the utility ... Sponsored By:
FEI Company
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Backside Circuit Edit on Full-Thickness Silicon Devices
Backside Circuit Edit (CE) techniques, in which a Focused Ion Beam (FIB) operator accesses critical circuitry through the substrate of an IC, are popular with processor ... Sponsored By:
FEI Company
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Recent Developments in TEM Applications for the IC Industry
Scaling ICs to the 45-nanometer node or beyond requires precise measurement of film thickness, interfacial roughness, and chemical distribution. At those nodes, ... Sponsored By:
FEI Company
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A New Method of Wafer-Level Plan-View TEM Sample Preparation by DualBeam
Transmission electron microscopy (TEM) is extremely important for obtaining high-resolution images with high materials contrast. Until now, plan-view TEM samples ... Sponsored By:
FEI Company
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