Mike Mayberry, VP of Intel's technology and manufacturing group, offers SST a summary of the company's presentations at this week's International Electron Devices Meeting (IEDM) in Baltimore focused on using III-V materials in leading-edge transistors, with some record-breaking achievements in drive current and peak transconductance.
At this week's International Electron Devices Meeting (IEDM), IMEC has debuted a new GaN-on-Si double heterostructure field-effect transistor (FET) device offering low leakage and high breakdown voltage to help reduce power loss in high-power switching applications.
Scaling will continue to follow the Moore's Law pace and will continue to rely on silicon to the 11nm node and beyond, although the emergence of fully depleted devices will disrupt device architectures, predicted Ghavam Shahidi from IBM research division, in a talk at this week's International Electron Devices Meeting (IEDM).
Speaking at the International Electron Devices Meeting (IEDM) in Baltimore, IMEC’s Thomas Hoffman outlined challenges and possible options of high-k metal-gate (HKMG) transistor stack materials and processes for future device generations.
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