IFTLE 136 European 3D SEMI Summit part 3

By Garrou

Continuing our look at the SEMI 3D European Summit:

Oerlikon Systems
Oerlikon systems discussed PVD solutions for TSV metallization. Since sputter deposition is line-of-sight, it has been difficult for it to fill high AR features. Ionized PVD addresses this coverage in high AR issue, but significantly increases the equipment costs.

Highly ionized sputtering (HIS) is based on high power pulsed magnetron sputtering and reportedly has excellent directionality and film quality. It deposits at a higher rate that ionized PVD.  They showed the following coverage for TI barrier layer in 10:1 AR TSV...



and the following data for Cu seed layers:


IMEC
Eric Beyne of IMEC discussed the 3D technology maturation process and COO issues.
The std IMEC 3DIC TSV process has had 5 x 50 um TSV, but recently they have indicated that a more to 3um dia TSV may be warranted. One reason is that a reduction in the dia of the TSV correspondingly reduces the keep out zone (KOZ) requirements. 


Another interesting comparison was the thermal impact of Cu/Sn intermetallic bumps vs Cu-Cu bonds, where the direct copper-copper bonding shows a significant reduction in temperature.





IMEC assessment of the cost structure for a 10 x 100 um interposer TSV vs a std 5 x 50 TSV vs the proposed 3 x 50 TSV looks like this:

Amkor
Ron Huemoeller of Amkor addresses future packaging needs. He showed an interesting Prismark slide, which showed that smart phones and tablets will account for more than 50% of the Semi Ind growth through 2016.
In terms of interposers, Ron shared his views on interposer density vs application space. IFTLE has mentioned several times that the only interposer programs that have been announced are ones requiring high density interposers only available from foundries. Although this statement still holds true, Ron points to “ lower end smart phones and tablets” as potentially requiring interposers with less than 8 um l/s which could be fabricated by an OSAT RDL line. 
In terms of memory supply for 2.5/3D products, Ron lists on Elpida (Micron) and Hynix as currently supplying.
For all the latest in 3DIC and advanced packaging, stay linked to IFTLE.





PhilG100x100

Dr. Phil Garrou gives his insight into leading edge developments in 3-D integration and advanced packaging, reporting the latest technical goings on from conferences, conversations, and more.

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IFTLE 142 GlobalFoundries 2.5 / 3D at 20nm; Intel Haswell GT3; UMC / SCP Prototype Details

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IFTLE 141 100GB Wide IO memory; AGC Glass Interposers; Nvidia talks stacked memory

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IFTLE 140 Important Apple Rumors; Xilinx not Deserting 2.5D; Book to Bill Improving

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IFTLE 138 Foundry Intel; 300 mm Capacity; SBA Low-K Oxide

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IFTLE 137 CMOS Image Sensor Market Update

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IFTLE 136 European 3D SEMI Summit part 3

Sun Feb 17 12:20:00 CST 2013

IFTLE 135 UMC / SCP Memory on Logic; SEMI Europe 3D Summit part 2

Tue Feb 12 13:18:00 CST 2013

IFTLE 134 SEMI 3D European Summit – Is the Wide IO Driver Dead ?

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IFTLE 133 SEMI ISS 2013 Comments from Samsung, GF, Intel and others

Mon Jan 28 09:31:00 CST 2013

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