GaN-on-Si LED from Bridgelux, Toshiba hits performance record

Bridgelux and Toshiba reported a 1.1mm2 LED chip fabricated on an 8" GaN-on-Si wafer, emitting 614mW, <3.1V @ 350mA. The companies will collaborate on commercializing GaN-on-Si LEDs, and Toshiba has invested in Bridgelux.

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