Table of Contents

Solid State Technology

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  • Columns

    • Editorial

      • Heard at The ConFab

        For the past five years, PennWell has sponsored an event called The ConFab, which is a conference focused on semiconductor manufacturing issues, combined with a variety of focused “networking” opportunities for sponsors and delegates.

    • Industry Forum

  • Departments

    • World News

      • SEMI: Fab investments poised for a comeback
        Fab spending has been sliding since early 2008 and is poised to sink to a 10-year low in 2009, according to recent data and projections from SEMI—but the good news is that 2010 could see a 90% surge in fab investments.
    • Tech News

      • Intel Research Day: Update on EUV, other projects
        Research at Intel Labs covered at the chipmaker’s annual event (June 18, Mountain View, CA) covered the major categories of eco-innovation, 3D graphics on the Internet, mobility, and enterprise.
      • GA Tech: Graphene could replace Cu for IC interconnects
        Researchers at Georgia Tech say they have experimentally demonstrated the potential for graphene to replace copper for on-chip interconnects and help extend performance scaling for silicon-based ICs.
      • Oerlikon discusses path to $0.70/W thin-film PV panels
        Oerlikon Solar announced during this spring’s Intersolar in Munich that it had achieved 11% initial power conversion efficiency on its full-size micromorph (a thin-film technology) modules (1.4m2), or 151Watts of initial power.
      • Applied targets 22nm copper barrier/seed PVD
        Applied Materials says its new Endura CuBS RFX PVD system, qualified for copper barrier/seed deposition technology at 32nm and 22nm for production of logic and flash memory, provides a lower cost/wafer than competing technologies, including CVD alternatives, by as much as 40%—calculating a normalized COO of the 130Å Ta + 450Å RFX Cu process (CuBS) at $1/wafer, according to Marek Radko, the firm’s BEOL GPM manager.
  • Features

    • Cover Article

    • Thermal Processing

      • Thermal processing issues for 22nm node junction scaling
        Whether flash lamp or sub-melt laser annealing is used for 22nm node ultra shallow junction, the annealing process and equipment must also be optimized to prevent strain relaxation, high-k/metal gate stack failure and wafer breakage. John Borland, J.O.B. technologies: Susan Felch; Zhinmin Wan, AIBT; Masayasu Tanjyo, Nissin Ion Equipment; Temel Buyuklimanli, EAG.
    • Wafer Bonding

      • Pressure indicating film characterization of wafer-to-wafer bonding
        Wafers are bonded by applying precise combinations of physical pressure, temperature, and/or voltage. Pressure is measured as an average, assuming perfectly flat pressure plates. In practice, the pressure plates are often non-ideal, or they may have degraded over time. Applied pressure characterization is important for high yielding eutectic/thermocompression bonds. Kwan-yu Lai, Micralyne Inc. and Jeffrey G. Stark, Sensor Products Inc.
    • Defect Detection

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LATEST ISSUE

05/01/2013
Volume 56, Issue 3

Article Archive for Solid State Technology.

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