Stacking NVM, CMOS
Researchers from the National Chiao Tung University's National Nano Device Laboratories describe their work which looks toward future 3D layered CMOS for giant high-speed data-storage applications. They demonstrate for the first time a sequentially processed 3D hybrid chip by stacking low-temperature (LT) ferroelectric-like (FE-like) metal-oxide nonvolatile memory (NVM) and multilayered TFT inverters. The sequential layered integration achieved sharp transfer characteristics and stackable 3D FE-like NVMs with 100ns program speed thanks to low-thermal-budget (sub-400°C) plasma/laser processes and self-assembled FE-like metal-ion-mediated APS dielectrics, which resemble low-k dielectrics and metallization in multi-layered back-end interconnects, they explain. (#33.6: "3D Ferroelectric-Like NVM/CMOS Hybrid Chip by Sub-400oC Sequential Layered Integration")
TEM of sequentially processed 3D hybrid chip from gate and channel view.
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