Silicon nanowire FETs on 200mm FDSOI CMOS
Researchers from EPFL, CEA-Leti, and Minatec demonstrate for the first time the implementation of a highly doped silicon nanowire electromechanical resonator that exploits the depletion charge modulation in a junctionless FET to transduce mechanical motion on-chip. A fundamental resonance frequency of 226 MHz is detected in the drain current. The device is fully integrated in an FD-SOI-CMOS platform using conventional 200mm wafer technology. (#15.2: "Resonant-Body Silicon Nanowire Field Effect Transistor without Junctions")
SEM image of a nanowire resonator (2.3μm × 65nm × 45nm). Electromechanical coupling is achieved through ~60nm flexible airgap capacitors. The nanowire resonates in-plane.
Print
Email
Save
