May 10, 2012 -- Dow Corning will add 2 AIXTRON AIX 2800G4 WW planetary reactor platforms to its silicon carbide (SiC) epitaxy capacity for next-generation power electronics.
The AIXTRON AIX 2800G4 WW planetary reactors will be commissioned in Q2 2012, in 10 x 100mm and 6 x 150mm SiC wafer configurations.
AIXTRON recently reported orders from U of Warsaw, LED maker FOREPI, and Japan's National Institute of Advanced Industrial Science and Technology.
Dow Corning’s power electronics group offers high-quality silicon carbide wafers and epitaxy services, using proprietary crystal growth methods and precision wafering processes.
Dow Corning offers 4H n+ conductive SiC wafers in test grades for research, in commercial grade for high-volume production, or in prime where top-end wafer specifications are required; and epi-layers (n+ or n-), on wafers from Dow Corning or on customer-supplied wafers, with thickness up to 20 ums. Dow Corning is equally owned by The Dow Chemical Company and Corning, Incorporated. Learn more at dowcorning.com/powerelectronics.