March 7, 2012 - Marketwire -- Meaglow Ltd., MOCVD and epitaxy supplier, launched a range of nitrogen-rich indium nitride (InN) wafers for research and industry development around the compound semiconductor material.
Indium nitride (InN) can be alloyed with gallium nitride (GaN) to build light-emitting diodes (LEDs). InN is also being developed for solar cells, high-speed transistors and other applications.
Research InN samples have been fabricated with >30% excess nitrogen. "Excess nitrogen is seen when forming the material at relatively low temperatures using plasma based nitrogen sources. These plasma sources provide the extra potential energy needed for nitrogen rich material to form. To a greater, or lesser, extent excess nitrogen species are probably present in most InN samples, as plasma techniques are commonly used," Meaglow Ltd's chief scientist, Dr. K. Scott Butcher, published in Applied Physics Letters 101 (2012) 011913.
Nitrogen-rich InN could resolve InN's surface current problem, enabling wider adoption of the material.
Meaglow Ltd. produces a range of epitaxy equipment (migration enhanced afterglow), MBE & MOCVD accessories, and specialized semiconductor thin films for research institutes and industry. Learn more at www.meaglow.com.