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LEDs 2012 P

  • Wed Dec 12 04:00:00 CST 2012 -- Why Taiwan LED equipment vendors can't support a 2013 rebound
    Taiwan makers of light-emitting diode (LED) products are unlikely to support a recovery in 2013 LED equipment spending due to an alarming cash crunch individually and sector-wide, warns one industry analyst.
  • Thu Dec 06 06:00:00 CST 2012 -- KLA-Tencor's updated LED wafer inspection tool boosts throughput, efficiency
    KLA-Tencor says its new fourth-generation LED wafer inspection system achieves greater flexibility, increased throughput, and improved efficiency for inspecting defects and performing 2D metrology in LED applications, as well as MEMS and semiconductor wafers.
  • Mon Oct 15 12:49:00 CDT 2012 -- Measuring inside an active OLED
    Researchers at the National Institute of Advanced Industrial Science say they have devised a way to selectively and nondestructively evaluate molecules within a sealed organic light-emitting diode (OLED) in operation, in hopes to further understand and eventually minimize performance degradation.
  • Wed Oct 10 09:09:00 CDT 2012 -- Azzurro, Epistar achieve GaN-on-Si on 150mm
    Azzurro and Epistar say they have achieved GaN-on-Si based high-brightness LEDs on 150mm GaN-on-Si substrates, billed as "one step further towards implementation in mass production."
  • Mon Oct 08 09:00:00 CDT 2012 -- Solvay unveils high-performance polyester material for LED TV components
    Solvay Specialty Polymers USA LLC has extended its line of high-performance polyester compounds with a new version targeting light-emitting diode (LED) TVs with higher heat and light stability.
  • Fri Oct 05 12:33:00 CDT 2012 -- ON Semiconductor joins imec’s GaN-on-Si research program
    ON Semiconductor has joined imec to collaborate on the development of next-generation GaN-on-Si power devices. ON Semiconductor is presently building a GaN processing line in its Oudenaarde facility in Belgium Oudenaarde, and it is expected to employ GaN-on-Si technology.
  • Thu Aug 30 20:04:00 CDT 2012 -- Cree intros 150mm 4HN SiC epi wafers
    Cree announced the availability of high quality, low micropipe 150mm 4H n-type silicon carbide (SiC) epitaxial wafers. 150mm epitaxial wafers with highly uniform epitaxial layers as thick as 100µm are available for immediate purchase
  • Thu Aug 23 14:51:00 CDT 2012 -- Laser diode researchers order Oxford Instruments ion beam depo tool
    Optoelectronics researchers at the Ferdinand-Braun-Institut ordered an Optofab3000 for Laser Bar Facet Coating from Oxford Instruments Plasma Technology.
  • Wed Aug 22 09:05:00 CDT 2012 -- Dynamic changes impacting advanced electronic materials industry
    Learn about the changes in semiconductor manufacturing as well as related markets -- photovoltaics, displays, LEDs, etc -- at the 2012 Strategic Materials Conference (SMC), to be held on October 23-24 in San Jose, CA. SEMI reports.
  • Mon Aug 20 14:02:00 CDT 2012 -- Samsung and LED maker OSRAM settle patent disputes globally
    OSRAM AG and Samsung Electronics Co., Ltd. have reached an agreement to settle all patent suits between them worldwide. The parties have reached license agreements for their respective LED patent portfolios.

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