IEDM isn't just about semiconductors anymore -- it's branched out into related technologies, even solar cell structures. Taiwan's National Nano Device Laboratories will show off a two-sided solar cell integrated with thin-film transistors built with sodium-free and Cd-free (n-type ZnS buffer layer) green technologies, resulting in 6" CIGS (CuInGaSe2) cells that topped out at 11% conversion efficiency at 500°C (left image). [Paper #36.5, "Bifacial CIGS (11% Efficiency)/Si Solar Cells By Cd-Free And Sodium-Free Green Process Integrated With CIGS TFTs")
Meanwhile, IBM researchers will report on 20.7% p-type crystalline silicon (c-Si) heterojunction solar cells (vs. previous mark of 17.4%), with a new emitter structure (right image) to reduce absorption loss in the PECVD stack, and using low-cost ZnO:Al electrodes instead of ITO. Results are compared favorably to NREL (p-type) and Sanyo (n-type) heterojunction technologies. [Paper #36.6, "Novel Heterojunction Solar Cells with Conversion Efficiencies Approaching 21% on p-Type Crystalline Silicon Substrates"]
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